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IRFI4212H-117P डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Digital Audio MOSFET - International Rectifier

भाग संख्या IRFI4212H-117P
समारोह Digital Audio MOSFET
मैन्युफैक्चरर्स International Rectifier 
लोगो International Rectifier लोगो 
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IRFI4212H-117P pdf
IRFI4212H-117P
Electrical Characteristics @ TJ = 25°C (unless otherwise specified) g
Parameter
Min. Typ. Max. Units
Conditions
BVDSS
∆ΒVDSS/TJ
RDS(on)
VGS(th)
VGS(th)/TJ
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
100 ––– ––– V VGS = 0V, ID = 250µA
––– 0.09 ––– V/°C Reference to 25°C, ID = 1mA
––– 58 72.5 mVGS = 10V, ID = 6.6A e
3.0 ––– 5.0
V VDS = VGS, ID = 250µA
––– -11 ––– mV/°C
IDSS
Drain-to-Source Leakage Current
––– ––– 20 µA VDS = 100V, VGS = 0V
––– ––– 250
VDS = 100V, VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Forward Leakage
––– ––– 200 nA VGS = 20V
Gate-to-Source Reverse Leakage
––– ––– -200
VGS = -20V
gfs Forward Transconductance
11 ––– ––– S VDS = 50V, ID = 6.6A
Qg Total Gate Charge
––– 12 18
Qgs1
Qgs2
Qgd
Qgodr
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
––– 1.6 –––
––– 0.71 –––
––– 6.2 –––
––– 3.5 –––
VDS = 80V
nC VGS = 10V
ID = 6.6A
See Fig. 6 and 15
Qsw Switch Charge (Qgs2 + Qgd)
––– 6.9 –––
RG(int)
Internal Gate Resistance
––– 3.4 –––
td(on)
Turn-On Delay Time
tr Rise Time
td(off)
Turn-Off Delay Time
tf Fall Time
––– 4.7 –––
VDD = 50V, VGS = 10V e
––– 8.3 –––
ID = 6.6A
––– 9.5 ––– ns RG = 2.5
––– 4.3 –––
Ciss Input Capacitance
––– 490 –––
VGS = 0V
Coss Output Capacitance
––– 64 ––– pF VDS = 50V
Crss
Reverse Transfer Capacitance
––– 34 –––
ƒ = 1.0MHz,
See Fig.5
Coss eff.
LD
Effective Output Capacitance
Internal Drain Inductance
––– 110 –––
––– 4.5 –––
VGS = 0V, VDS = 0V to 80V
Between lead,
D
nH 6mm (0.25in.)
LS Internal Source Inductance
––– 7.5 –––
from package
G
and center of die contact
S
Diode Characteristics g
Parameter
IS @ TC = 25°C Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
(Body Diode) c
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
Min.
–––
–––
–––
–––
–––
Typ.
–––
–––
–––
36
56
Max. Units
Conditions
11 MOSFET symbol
A showing the
44 integral reverse
p-n junction diode.
1.3 V TJ = 25°C, IS = 6.6A, VGS = 0V e
54 ns TJ = 25°C, IF = 6.6A
84 nC di/dt = 100A/µs e
Notes:
 Repetitive rating; pulse width limited by max. junction temperature.
‚ Starting TJ = 25°C, L = 1.9mH, RG = 25, IAS = 6.6A.
ƒ Pulse width 400µs; duty cycle 2%.
„ Rθ is measured at TJ of approximately 90°C.
… Specifications refer to single MosFET.
2 www.irf.com

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International Rectifier


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