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AOT10N65 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - 10A N-Channel MOSFET - Alpha & Omega Semiconductors

भाग संख्या AOT10N65
समारोह 10A N-Channel MOSFET
मैन्युफैक्चरर्स Alpha & Omega Semiconductors 
लोगो Alpha & Omega Semiconductors लोगो 
पूर्व दर्शन
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<?=AOT10N65?> डेटा पत्रक पीडीएफ

AOT10N65 pdf
AOT10N65/AOTF10N65
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min Typ Max Units
STATIC PARAMETERS
BVDSS
BVDSS
/∆TJ
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
ID=250µA, VGS=0V, TJ=25°C
ID=250µA, VGS=0V, TJ=150°C
ID=250µA, VGS=0V
IDSS Zero Gate Voltage Drain Current
VDS=650V, VGS=0V
VDS=520V, TJ=125°C
IGSS
VGS(th)
Gate-Body leakage current
Gate Threshold Voltage
VDS=0V, VGS=±30V
VDS=5V, ID=250µA
RDS(ON)
gFS
VSD
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
VGS=10V, ID=5A
VDS=40V, ID=5A
IS=1A,VGS=0V
IS Maximum Body-Diode Continuous Current
ISM Maximum Body-Diode Pulsed Current
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
VGS=0V, VDS=25V, f=1MHz
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=0V, f=1MHz
650
750
0.75
1
10
±100
3 4 4.5
0.77 1
13
0.73 1
10
36
V
V/ oC
µA
nΑ
V
S
V
A
A
1095
95
8
1.7
1369
118
10
3.5
1645
145
12
5.5
pF
pF
pF
SWITCHING PARAMETERS
Qg Total Gate Charge
Qgs Gate Source Charge
VGS=10V, VDS=520V, ID=10A
Qgd Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
tD(off)
Turn-On Rise Time
Turn-Off DelayTime
VGS=10V, VDS=325V, ID=10A,
RG=25
tf Turn-Off Fall Time
trr Body Diode Reverse Recovery Time IF=10A,dI/dt=100A/µs,VDS=100V
Qrr Body Diode Reverse Recovery Charge IF=10A,dI/dt=100A/µs,VDS=100V
22 27.7 33
6 7.4 9
9 11.3 14
30
61
74
53
255 320 385
4.8 6 7.2
nC
nC
nC
ns
ns
ns
ns
ns
µC
A. The value of R θJA is measured with the device in a still air environment with TA =25°C.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation
limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial TJ
=25°C.
D. The R θJA is the sum of the thermal impedance from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. L=60mH, IAS=3.4A, VDD=150V, RG=25, Starting TJ=25°C
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev3: March 2011
www.aosmd.com
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