DataSheet.in

IRG4PH40S डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Standard Speed IGBT - International Rectifier

भाग संख्या IRG4PH40S
समारोह Standard Speed IGBT
मैन्युफैक्चरर्स International Rectifier 
लोगो International Rectifier लोगो 
पूर्व दर्शन
1 Page
		
<?=IRG4PH40S?> डेटा पत्रक पीडीएफ

IRG4PH40S pdf
IRG4PH40S
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
V(BR)CES
V(BR)ECS
V(BR)CES/TJ
VCE(ON)
VGE(th)
VGE(th)/TJ
gfe
ICES
IGES
Parameter
Collector-to-Emitter Breakdown Voltage
Emitter-to-Collector Breakdown Voltage „
Temperature Coeff. of Breakdown Voltage
Collector-to-Emitter Saturation Voltage
Gate Threshold Voltage
Temperature Coeff. of Threshold Voltage
Forward Transconductance …
Zero Gate Voltage Collector Current
Gate-to-Emitter Leakage Current
Min.
1200
18
3.0
17
Typ. Max. Units
Conditions
— — V VGE = 0V, IC = 250µA
— — V VGE = 0V, IC = 1.0A
1.23 — V/°C VGE = 0V, IC = 1.0mA
1.46 1.75
IC = 20A
VGE = 15V
1.71 — V IC = 33A
See Fig.2, 5
1.51 —
IC = 20A , TJ = 150°C
— 6.0
VCE = VGE, IC = 250µA
-9.6 — mV/°C VCE = VGE, IC = 250µA
26 — S VCE = 50 V, IC = 20A
— 250 µA VGE = 0V, VCE = 1200V
— 5000
VGE = 0V, VCE = 1200V, TJ = 150°C
— ±100 nA VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Ets
LE
Cies
Coes
Cres
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min. Typ. Max. Units
Conditions
— 85 130
IC = 20A
— 13 19 nC VCC = 400V
— 31 46
VGE = 15V
— 20 —
See Fig.8
— 17 — ns TJ = 25°C
— 650 970
IC = 20A, VCC = 960V
— 520 790
VGE = 15V, RG = 10
— 0.70 —
Energy losses include "tail"
— 10.42 — mJ See Fig. 9,10,14
— 11.12 22
— 20 —
— 19 —
— 850 —
— 1150 —
TJ = 150°C,
ns IC = 20A, VCC = 960V
VGE = 15V, RG = 10
Energy losses include "tail"
— 19.5 — mJ See Fig. 10,11,14
— 13 — nH Measured 5mm from package
— 1840 —
— 110 —
— 18 —
VGE = 0V
pF VCC = 30V
ƒ = 1.0MHz
See Fig. 7
Notes:
 Repetitive rating; VGE = 20V, pulse width limited by
max. junction temperature. ( See fig. 13b )
‚ VCC = 80%(VCES), VGE = 20V, L = 10µH, RG = 10,
(See fig. 13a)
2
ƒ Repetitive rating; pulse width limited by maximum
junction temperature.
„ Pulse width 80µs; duty factor 0.1%.
… Pulse width 5.0µs, single shot.
www.irf.com

विन्यास 8 पेज
डाउनलोड[ IRG4PH40S Datasheet.PDF ]


शेयर लिंक


अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
IRG4PH40KINSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODEInternational Rectifier
International Rectifier
IRG4PH40KDINSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODEInternational Rectifier
International Rectifier


भाग संख्याविवरणविनिर्माण
30L120CTSchottky RectifierPFC Device
PFC Device
AT28C010-12DKSpace 1-MBit (128K x 8) Paged Parallel EEPROMATMEL
ATMEL
B20NM50FDN-CHANNEL POWER MOSFETSTMicroelectronics
STMicroelectronics
D8442SD844SavantIC
SavantIC
FAE391-A20AM/FM Automotive Electronic TunerMitsumi
Mitsumi


Index : 0  1  2  3  4  5  6  7  8  9  A  B  C  D  E  F  G  H  I  J  K  L  M  N  O  P  Q  R  S  T  U  V  W  X  Y  Z



www.DataSheet.in    |   2017   |  संपर्क   |   खोज     |   English