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IXGQ28N120BD1 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - High Voltage IGBT - IXYS

भाग संख्या IXGQ28N120BD1
समारोह High Voltage IGBT
मैन्युफैक्चरर्स IXYS 
लोगो IXYS लोगो 
पूर्व दर्शन
1 Page
		
<?=IXGQ28N120BD1?> डेटा पत्रक पीडीएफ

IXGQ28N120BD1 pdf
IXGQ 28N120B
IXGQ 28N120BD1
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
g
fs
C
ies
Coes
Cres
Qg
Q
ge
Qgc
td(on)
tri
td(off)
tf i
Eoff
td(on)
t
ri
Eon
t
d(off)
tf i
Eoff
RthJC
R
thCK
I = 28A; V = 10 V, Note 2
C CE
20 30
VCE = 25 V, VGE = 0 V, f = 1 MHz
2700
28N120B 170
28N120BD1 180
60
I = 28A, V = 15 V, V = 0.5 V
C GE
CE CES
92
17
37
Inductive load, TJ = 25°C
IC = 28 A; VGE = 15 V
VCE = 0.8 VCES; RG = Roff = 5
Note 1.
30
20
180
160
2.0
S
pF
pF
pF
pF
nC
nC
nC
ns
ns
280 ns
320 ns
5.0 mJ
Inductive load, TJ = 125°C
IC = 28A; VGE = 15 V
VCE = 0.8 VCES; RG = Roff = 5
Note 1
35 ns
28 ns
2.5 mJ
250 ns
300 ns
8.0 mJ
0.25
0.5 K/W
K/W
TO-3P (IXTQ) Outline
Reverse Diode (FRED)
Symbol
IF
Test Conditions
TC = 90°C
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
10 A
VF IF = 10 A, VGE = 0 V
IF = 10 A, VGE = 0 V, TJ = 125°C
2.95 V
2.0 V
IRM
t
rr
trr
RthJC
IF = 10 A; -diF/dt = 400 A/µs, VR = 600 V
V
GE
=
0
V;
T
J
=
125°C
IF = 1 A; -diF/dt = 100 A/µs; VR = 30 V, VGE = 0 V
14 A
120 ns
40 ns
2.5 K/W
Notes: 1.
2.
Switching times may increase for V (Clamp) > 0.8 • V ,
CE CES
higher TJ or increased RG.
Pulse test, t 300 µs, duty cycle d 2 %
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more 4,850,072 4,931,844 5,034,796 5,063,307
of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961
5,237,481 5,381,025
5,187,117 5,486,715
6,404,065B1 6,162,665 6,534,343 6,583,505
6,306,728B1 6,259,123B1 6,306,728B1 6,683,344

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डाउनलोड[ IXGQ28N120BD1 Datasheet.PDF ]


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अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
IXGQ28N120BD1High Voltage IGBTIXYS
IXYS


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