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IXFX32N100Q3 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Power MOSFET - IXYS

भाग संख्या IXFX32N100Q3
समारोह Power MOSFET
मैन्युफैक्चरर्स IXYS 
लोगो IXYS लोगो 
पूर्व दर्शन
1 Page
		
<?=IXFX32N100Q3?> डेटा पत्रक पीडीएफ

IXFX32N100Q3 pdf
Symbol
Test Conditions
(TJ = 25°C Unless Otherwise Specified)
gfs VDS = 20V, ID = 0.5 • ID25, Note 1
Ciss
Coss
Crss
VGS = 0V, VDS = 25V, f = 1MHz
RGi Gate Input Resistance
td(on)
tr
td(off)
tf
Resistive Switching Times
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG = 1Ω (External)
Qg(on)
Qgs
Qgd
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RthJC
RthCS
Characteristic Values
Min. Typ. Max.
20 32
S
9940
766
64
pF
pF
pF
0.15 Ω
45 ns
15 ns
54 ns
12 ns
195 nC
60 nC
78 nC
0.10 °C/W
0.15 °C/W
Source-Drain Diode
Symbol
Test Conditions
(TJ = 25°C Unless Otherwise Specified)
IS VGS = 0V
ISM Repetitive, Pulse Width Limited by TJM
VSD IF = IS, VGS = 0V, Note 1
trr
QRM
IRM
IF = 16A, -di/dt = 100A/μs
VR = 100V, VGS = 0V
Characteristic Values
Min. Typ. Max.
32 A
128 A
1.4 V
250 ns
1.2 μC
12.3 A
IXFK32N100Q3
IXFX32N100Q3
TO-264 AA Outline
Dim.
A
A1
A2
b
b1
b2
c
D
E
e
J
K
L
L1
P
Q
Q1
R
R1
S
T
Millimeter
Min. Max.
4.82
2.54
2.00
5.13
2.89
2.10
1.12
2.39
2.90
0.53
1.42
2.69
3.09
0.83
25.91 26.16
19.81 19.96
5.46 BSC
0.00 0.25
0.00 0.25
20.32
2.29
3.17
20.83
2.59
3.66
6.07 6.27
8.38 8.69
3.81
1.78
6.04
4.32
2.29
6.30
1.57 1.83
Terminals:
1 - Gate
2 - Drain
3 - Source
4 - Drain
Inches
Min. Max.
.190
.100
.079
.202
.114
.083
.044
.094
.114
.021
.056
.106
.122
.033
1.020 1.030
.780 .786
.215 BSC
.000 .010
.000 .010
.800
.090
.125
.820
.102
.144
.239
.330
.247
.342
.150
.070
.238
.170
.090
.248
.062 .072
PLUS 247TM Outline
Note 1. Pulse test, t 300μs, duty cycle, d 2%.
Terminals: 1 - Gate
2 - Drain
3 - Source
ADVANCE TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a
"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test
conditions, and dimensions without notice.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592
by one or more of the following U.S. patents: 4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
Dim. Millimeter
Min. Max.
A 4.83 5.21
A1 2.29 2.54
A2 1.91 2.16
b 1.14 1.40
b1 1.91 2.13
b2 2.92 3.12
C 0.61 0.80
D 20.80 21.34
E 15.75 16.13
e 5.45 BSC
L 19.81 20.32
L1 3.81 4.32
Q 5.59 6.20
R 4.32 4.83
Inches
Min. Max.
.190 .205
.090 .100
.075 .085
.045 .055
.075 .084
.115 .123
.024 .031
.819 .840
.620 .635
.215 BSC
.780 .800
.150 .170
.220 0.244
.170 .190
6,683,344
6,727,585 7,005,734 B2 7,157,338B2
6,710,405 B2 6,759,692 7,063,975 B2
6,710,463
6,771,478 B2 7,071,537

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डाउनलोड[ IXFX32N100Q3 Datasheet.PDF ]


शेयर लिंक


अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
IXFX32N100Q3Power MOSFETIXYS
IXYS


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