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IRG5K75HF06A डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - IGBT Half-Bridge - International Rectifier

भाग संख्या IRG5K75HF06A
समारोह IGBT Half-Bridge
मैन्युफैक्चरर्स International Rectifier 
लोगो International Rectifier लोगो 
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IRG5K75HF06A pdf
IRG5K50P5K50PM06E
IRG5K75HF06A
Electrical Characteristics of IGBT at TJ = 25°C (Unless Otherwise Specified)
Parameter
Min. Typ. Max. Unit Test Conditions
V(BR)CES
VGE(th)
Collector to Emitter Breakdown
Voltage
Gate Threshold Voltage
600
3.5
VCE(ON)
Collector to Emitter Saturation Voltage
ICES Collector to Emitter Leakage Current
IGES Gate to Emitter Leakage Current
4.5
1.80
2.00
5.5
2.10
1
400
V VGE = 0V, IC = 1mA
V IC = 0.25mA, VCE = VGE
V TJ = 25°C
IC = 75A,
V
TJ = 125°C
VGE = 15V
mA VGE = 0V, VCE = VCES
nA VGE = ±20V, VCE = 0
Switching Characteristics of IGBT
Parameter
td(on) Turn-on Delay Time
tr Rise Time
td(off)
Turn-off Delay Time
tf Fall Time
Eon Turn-on Switching Loss
Eoff Turn-off Switching Loss
Qg Total Gate Charge
Cies Input Capacitance
Coes Output Capacitance
Cres Reverse Transfer Capacitance
RBSOA Reverse Bias Safe Operating Area
SCSOA Short Circuit Safe Operating Area
Min.
Typ.
105
100
90
90
240
250
90
110
0.52
0.93
0.90
1.43
260
3.6
0.45
0.18
Max.
Trapezoid
10
Unit
ns
ns
ns
ns
mJ
mJ
nC
Test Conditions
TJ = 25°C
TJ = 125°C
TJ = 25°C
TJ = 125°C
TJ = 25°C
TJ = 125°C
TJ = 25°C
TJ = 125°C
TJ = 25°C
VCC=300V,
IC = 75A,
RG = 20Ω,
VGE=±15V,
Inductive
Load
TJ = 125°C
TJ = 25°C
TJ = 125°C
TJ = 25°C
nF VCE = 25V, VGE = 0V,
f 1MHz, TJ = 25°C
IC = 150A,VCC = 480V,
VP = 600V, RG = 15Ω,
VGE = +15V to 0V,
TJ = 150°C
μs VCC = 300V, VGE = 15V,
TJ = 150°C
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