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IRGP6630D-EPbF डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Insulated Gate Bipolar Transistor - International Rectifier

भाग संख्या IRGP6630D-EPbF
समारोह Insulated Gate Bipolar Transistor
मैन्युफैक्चरर्स International Rectifier 
लोगो International Rectifier लोगो 
पूर्व दर्शन
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IRGP6630D-EPbF pdf
  IRGP6630DPbF/IRGP6630D-EPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ.
V(BR)CES
Collector-to-Emitter Breakdown Voltage
V(BR)CES/TJ Temperature Coeff. of Breakdown Voltage
VCE(on)
Collector-to-Emitter Saturation Voltage
VGE(th)
VGE(th)/TJ
gfe
ICES
IGES
VF  
Gate Threshold Voltage
Threshold Voltage Temperature Coeff.
Forward Transconductance
Collector-to-Emitter Leakage Current
Gate-to-Emitter Leakage Current
Diode Forward Voltage Drop  
600
4.0
0.94
1.65
2.05
2.10
-20
12
1.0
410
1.6
1.3
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ.
Qg
Qge
Qgc
Eon
Eoff
Etotal
td(on)
tr
td(off)
tf
Eon
Eoff
Etotal
td(on)
tr
td(off)
tf
Cies
Coes
Cres
Total Gate Charge (turn-on)
Gate-to-Emitter Charge (turn-on)
Gate-to-Collector Charge (turn-on)
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
Turn-Off delay time
Fall time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
Turn-Off delay time
Fall time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
— 30
— 10
— 15
— 75
— 350
— 425
— 40
— 25
— 95
— 20
— 230
— 570
— 800
— 30
— 25
— 100
— 80
— 1080
— 70
— 30
Max.
1.95
6.5
25
±100
2.3
Max
RBSOA
Reverse Bias Safe Operating Area
FULL SQUARE
SCSOA  
Erec
trr
Irr
Short Circuit Safe Operating Area  
Reverse Recovery Energy of the Diode
Diode Reverse Recovery Time
Peak Reverse Recovery Current
5     
— 180 —
— 70 —
— 15 —
Units
Conditions
V VGE = 0V, IC = 100µA
V/°C VGE = 0V, IC = 1.2mA (25°C-175°C)
IC = 18A, VGE = 15V, TJ = 25°C
V IC = 18A, VGE = 15V, TJ = 150°C
IC = 18A, VGE = 15V, TJ = 175°C
V VCE = VGE, IC = 500µA
mV/°C VCE = VGE, IC = 500µA (25°C-175°C)
S VCE = 50V, IC = 18A, PW = 20µs
µA
VGE = 0V, VCE = 600V
VGE = 0V, VCE = 600V, TJ = 175°C
nA VGE = ±20V
V
IF = 6A
IF = 6A, TJ = 175°C
Units
Conditions
IC = 18A
nC VGE = 15V
VCC = 400V
µJ   IC = 18A, VCC = 400V, VGE=15V
RG = 22, TJ = 25°C
Energy losses include tail & diode
ns  reverse recovery 
µJ  IC = 18A, VCC = 400V, VGE=15V
RG = 22, TJ = 175°C
Energy losses include tail & diode
ns reverse recovery  
VGE = 0V
pF VCC = 30V
f = 1.0MHz
TJ = 175°C, IC = 72A
VCC = 480V, Vp 600V
VGE = +20V to 0V
µs
 
TJ = 150°C,VCC = 400V, Vp 600V
VGE = +15V to 0V
µJ TJ = 175°C
ns VCC = 400V, IF = 6A, VGE = 15V
A Rg = 22L = 0.68mH, L=150nH
Notes:
VCC = 80% (VCES), VGE = 20V, Rg = 22L=620µH.
Ris measured at TJ of approximately 90°C.
Refer to AN-1086 for guidelines for measuring V(BR)CES safely.
Pulse width limited by max. junction temperature.
Values influenced by parasitic L and C in measurement.
fsw =40KHz, refer to figure 26.
2 www.irf.com © 2014 International Rectifier
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April 14, 2014

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