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DMP2039UFDE डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - P-CHANNEL ENHANCEMENT MODE MOSFET - Diodes

भाग संख्या DMP2039UFDE
समारोह P-CHANNEL ENHANCEMENT MODE MOSFET
मैन्युफैक्चरर्स Diodes 
लोगो Diodes लोगो 
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DMP2039UFDE pdf
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Continuous Drain Current (Note 5) VGS = -4.5V
Continuous Drain Current (Note 5) VGS = -1.8V
Pulsed Drain Current (10µs pulse, duty cycle = 1%)
Continuous Source-Drain Diode Current
Steady
State
t<5s
Steady
State
t<5s
TA = +25°C
TA = +70°C
TA = +25°C
TA = +70°C
TA = +25°C
TA = +70°C
TA = +25°C
TA = +70°C
Symbol
VDSS
VGSS
ID
ID
ID
ID
IDM
IS
DMP2039UFDE
Value
-25
±8
-6.7
-5.3
-8.3
-6.6
-5.4
-4.3
-6.6
-5.2
-60
-2.0
Units
V
V
A
A
A
A
A
A
Thermal Characteristics
Total Power Dissipation (Note 5)
Characteristic
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 6)
Thermal Resistance, Junction to Case (Note 6)
Operating and Storage Temperature Range
TA = +25°C
TA = +70°C
Steady state
t<5s
TA = +25°C
TA = +70°C
Steady state
t<5s
Steady state
Symbol
PD
RθJA
PD
RθJA
RθJC
TJ, TSTG
Value
0.8
1.2
160
104
2.0
2.9
63
42
10.8
-55 to +150
Units
W
°C/W
W
°C/W
°C/W
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (VGS = -4.5V)
Total Gate Charge (VGS = -8V
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Symbol
BVDSS
IDSS
IGSS
VGS(th)
RDS (ON)
|Yfs|
VSD
Ciss
Coss
Crss
Rg
Qg
Qg
Qgs
Qgd
tD(on)
tr
tD(off)
tf
Min
-25
-0.4
Typ
20
24
28
33
16
-0.7
2530
203
177
9.1
28.2
48.7
3.2
5.0
15.1
23.5
137.6
80.5
Max
-1
±10
-1.0
27
34
40
70
-1.0
Unit Test Condition
V VGS = 0V, ID = -250µA
µA VDS = -25V, VGS = 0V
µA VGS = ±8.0V, VDS = 0V
V VDS = VGS, ID = -250µA
VGS = -4.5V, ID = -6.4A
mΩ VGS = -2.5V, ID = -4.8A
VGS = -1.8V, ID = -2.5A
VGS = -1.5V, ID = -1.5A
S VDS = -5V, ID = -4A
V VGS = 0V, IS = -1A
pF
pF VDS = -15V, VGS = 0V
f = 1.0MHz
pF
Ω VDS = 0V, VGS = 0V, f = 1.0MHz
nC
nC
nC VDS = -15V, ID = -4.0A
nC
ns
ns VDD = -15V, VGS = -4.5V, RG = 1,
ns ID = -4.0A
ns
Notes:
5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate
7. Short duration pulse test used to minimize self-heating effect
8. Guaranteed by design. Not subject to production testing.
DMP2039UFDE
Document number: DS35420 Rev. 5 - 2
2 of 6
www.diodes.com
July 2012
© Diodes Incorporated

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