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AP62T02GJ डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-CHANNEL ENHANCEMENT MODE POWER MOSFET - Advanced Power Electronics

भाग संख्या AP62T02GJ
समारोह N-CHANNEL ENHANCEMENT MODE POWER MOSFET
मैन्युफैक्चरर्स Advanced Power Electronics 
लोगो Advanced Power Electronics लोगो 
पूर्व दर्शन
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<?=AP62T02GJ?> डेटा पत्रक पीडीएफ

AP62T02GJ pdf
AP62T02GH/J
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
ΔBVDSS/ΔTj
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Rg
Drain-Source Breakdown Voltage
VGS=0V, ID=250uA
Breakdown Voltage Temperature Coefficient Reference to 25, ID=1mA
Static Drain-Source On-Resistance2 VGS=10V, ID=30A
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current (Tj=25oC)
Drain-Source Leakage Current (Tj=175oC)
Gate-Source Leakage
Total Gate Charge2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VGS=4.5V, ID=15A
VDS=VGS, ID=250uA
VDS=10V, ID=30A
VDS=30V, VGS=0V
VDS=24V ,VGS=0V
VGS= ±20V
ID=30A
VDS=24V
VGS=4.5V
VDS=15V
ID=30A
RG=3.3Ω,VGS=10V
RD=0.5Ω
VGS=0V
VDS=25V
f=1.0MHz
Gate Resistance
f=1.0MHz
30 - - V
- 0.02 - V/
- 10 12 mΩ
- 13 16 mΩ
0.5 - 1.5 V
- 34 -
S
- - 1 uA
- - 250 uA
- - ±100 nA
- 13 20 nC
- 2.6 - nC
- 8 - nC
- 7.5 - ns
- 90 - ns
- 22 - ns
- 6.5 - ns
- 950 1420 pF
- 220 - pF
- 160 - pF
- 1.1 1.7 Ω
Source-Drain Diode
Symbol
VSD
trr
Qrr
Parameter
Forward On Voltage2
Reverse Recovery Time2
Reverse Recovery Charge
Test Conditions
IS=30A, VGS=0V
IS=20A, VGS=0V,
dI/dt=100A/µs
Min. Typ. Max. Units
- - 1.3 V
- 30 - ns
- 25 - nC
Notes:
1.Pulse width limited by safe operating area.
2.Pulse width <300us , duty cycle <2%.
3.Starting Tj=25oC , VDD=25V , L=0.1mH , RG=25Ω , IAS=24A.
2/4

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