DataSheet.in

AP11S60I-HF-3 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-CHANNEL ENHANCEMENT MODE POWER MOSFET - Advanced Power Electronics

भाग संख्या AP11S60I-HF-3
समारोह N-CHANNEL ENHANCEMENT MODE POWER MOSFET
मैन्युफैक्चरर्स Advanced Power Electronics 
लोगो Advanced Power Electronics लोगो 
पूर्व दर्शन
1 Page
		
<?=AP11S60I-HF-3?> डेटा पत्रक पीडीएफ

AP11S60I-HF-3 pdf
Advanced Power
Electronics Corp.
AP11S60I-HF-3
Electrical Specifications at Tj=25°C (unless otherwise specified)
Symbol
BVDSS
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Rg
Parameter
Test Conditions
Drain-Source Breakdown Voltage VGS=0V, ID=250uA
Static Drain-Source On-Resistance2 VGS=10V, ID=3.7A
Gate Threshold Voltage
VDS=VGS, ID=250uA
Forward Transconductance
Drain-Source Leakage Current
Gate-Source Leakage
Total Gate Charge
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VDS=10V, ID=5A
VDS=480V, VGS=0V
VGS=±20V, VDS=0V
ID=5A
VDS=480V
VGS=10V
VDD=300V
ID=5A
RG=3.3
VGS=10V
VGS=0V
VDS=25V
f=1.0MHz
Gate Resistance
f=1.0MHz
Source-Drain Diode
Symbol
Parameter
VSD Forward On Voltage2
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
Test Conditions
IS=5A, VGS=0V
IS=5A, VGS=0V
dI/dt=100A/µs
Min. Typ. Max. Units
600 - - V
- - 0.37
2 - 4V
- 10 -
S
- - 25 uA
- - ±100 nA
- 38 61 nC
- 6.5 - nC
- 19 - nC
- 11 - ns
- 13 - ns
- 49 - ns
- 17 - ns
- 1065 1704 pF
- 625 - pF
- 5 - pF
- 4.6 9.2
Min. Typ. Max. Units
- 0.8 -
V
- 260 - ns
- 3.8 - µC
Notes:
1.Pulse width limited by maximum junction temperature.
2.Pulse width <300us, duty cycle < 2%
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
©2013 Advanced Power Electronics Corp. USA
www.a-powerusa.com
2/5

विन्यास 5 पेज
डाउनलोड[ AP11S60I-HF-3 Datasheet.PDF ]


शेयर लिंक


अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
AP11S60I-HF-3N-CHANNEL ENHANCEMENT MODE POWER MOSFETAdvanced Power Electronics
Advanced Power Electronics


भाग संख्याविवरणविनिर्माण
30L120CTSchottky RectifierPFC Device
PFC Device
AT28C010-12DKSpace 1-MBit (128K x 8) Paged Parallel EEPROMATMEL
ATMEL
B20NM50FDN-CHANNEL POWER MOSFETSTMicroelectronics
STMicroelectronics
D8442SD844SavantIC
SavantIC
FAE391-A20AM/FM Automotive Electronic TunerMitsumi
Mitsumi


Index : 0  1  2  3  4  5  6  7  8  9  A  B  C  D  E  F  G  H  I  J  K  L  M  N  O  P  Q  R  S  T  U  V  W  X  Y  Z



www.DataSheet.in    |   2017   |  संपर्क   |   खोज     |   English