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IRF5802PbF डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Power MOSFET - International Rectifier

भाग संख्या IRF5802PbF
समारोह Power MOSFET
मैन्युफैक्चरर्स International Rectifier 
लोगो International Rectifier लोगो 
पूर्व दर्शन
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IRF5802PbF pdf
IRF5802PbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
Gate Threshold Voltage
IDSS Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
IGSS Gate-to-Source Reverse Leakage
150
–––
–––
3.0
–––
–––
–––
–––
–––
0.19
–––
–––
–––
–––
–––
–––
–––
–––
1.2
5.5
25
250
100
-100
V
V/°C
V
µA
nA
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 1mA ƒ
VGS = 10V, ID = 0.54A ƒ
VDS = VGS, ID = 250µA
VDS = 150V, VGS = 0V
VDS = 120V, VGS = 0V, TJ = 125°C
VGS = 30V
VGS = -30V
Dynamic @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
gfs Forward Transconductance
0.55 ––– ––– S VDS = 50V, ID = 0.54A
Qg Total Gate Charge
Qgs Gate-to-Source Charge
––– 4.5 6.8
––– 1.0 1.5
ID = 0.54A
nC VDS = 120V
Qgd
td(on)
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
––– 2.4 3.6
––– 6.0 –––
VGS = 10V,
VDD = 75V
tr
td(off)
tf
Ciss
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
––– 1.6 ––– ns ID = 0.54A
––– 7.5 –––
RG = 6.0
––– 9.2 –––
VGS = 10V ƒ
––– 88 –––
VGS = 0V
Coss
Crss
Output Capacitance
Reverse Transfer Capacitance
––– 26 –––
VDS = 25V
––– 7.7 ––– pF ƒ = 1.0MHz
Coss
Coss
Coss eff.
Output Capacitance
Output Capacitance
Effective Output Capacitance
––– 110 –––
––– 14 –––
––– 3.0 –––
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
VGS = 0V, VDS = 120V, ƒ = 1.0MHz
VGS = 0V, VDS = 0V to 120V …
Avalanche Characteristics
Parameter
EAS Single Pulse Avalanche Energy‚
IAR Avalanche Current
Typ.
–––
–––
Max.
9.5
0.9
Units
mJ
A
Diode Characteristics
Parameter
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
(Body Diode) 
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse RecoveryCharge
2
Min.
–––
–––
–––
–––
–––
Typ.
–––
–––
–––
46
55
Max.
1.8
18
1.3
69
83
Units
A
V
ns
nC
Conditions
MOSFET symbol
D
showing the
integral reverse
G
p-n junction diode.
S
TJ = 25°C, IS = 0.54A, VGS = 0V ƒ
TJ = 25°C, IF = 0.54A
di/dt = 100A/µs ƒ
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