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AP13P15GP डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - P-CHANNEL ENHANCEMENT MODE POWER MOSFET - Advanced Power Electronics

भाग संख्या AP13P15GP
समारोह P-CHANNEL ENHANCEMENT MODE POWER MOSFET
मैन्युफैक्चरर्स Advanced Power Electronics 
लोगो Advanced Power Electronics लोगो 
पूर्व दर्शन
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<?=AP13P15GP?> डेटा पत्रक पीडीएफ

AP13P15GP pdf
AP13P15GS/P
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
ΔBVDSS/ΔTj
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Rg
Drain-Source Breakdown Voltage
VGS=0V, ID=-1mA
Breakdown Voltage Temperature Coefficient Reference to 25, ID=-1mA
Static Drain-Source On-Resistance2 VGS=-10V, ID=-7A
Gate Threshold Voltage
VDS=VGS, ID=-250uA
Forward Transconductance
Drain-Source Leakage Current (Tj=25oC)
Drain-Source Leakage Current (Tj=150oC)
Gate-Source Leakage
Total Gate Charge2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VDS=-10V, ID=-7A
VDS=-150V, VGS=0V
VDS=-120V, VGS=0V
VGS= ±20V
ID=-7A
VDS=-120V
VGS=-10V
VDS=-75V
ID=-7A
RG=10Ω,VGS=-10V
RD=10.7Ω
VGS=0V
VDS=-25V
f=1.0MHz
Gate Resistance
f=1.0MHz
-150 - - V
- -0.1 - V/
- - 300 mΩ
-1 - -3 V
-6-S
- - -25 uA
- - -100 uA
- - ±100 nA
- 38 60 nC
- 5 - nC
- 15 - nC
- 11 - ns
- 21 - ns
- 60 - ns
- 36 - ns
- 1210 1940 pF
- 220 - pF
- 60 - pF
- 3.5 5 Ω
Source-Drain Diode
Symbol
VSD
trr
Qrr
Parameter
Forward On Voltage2
Reverse Recovery Time2
Reverse Recovery Charge
Test Conditions
IS=-7A, VGS=0V
IS=-7A, VGS=0V,
dI/dt=-100A/µs
Min. Typ. Max. Units
- - -1.3 V
- 110 - ns
- 620 - nC
Notes:
1.Pulse width limited by safe operating area.
2.Pulse width <300us , duty cycle <2%.
2/4

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