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IRGP6690D-EPbF डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Insulated Gate Bipolar Transistor - International Rectifier

भाग संख्या IRGP6690D-EPbF
समारोह Insulated Gate Bipolar Transistor
मैन्युफैक्चरर्स International Rectifier 
लोगो International Rectifier लोगो 
पूर्व दर्शन
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IRGP6690D-EPbF pdf
IRGP6690DPbF/IRGP6690D-EPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ.
V(BR)CES
Collector-to-Emitter Breakdown Voltage
ΔV(BR)CES/ΔTJ Temperature Coeff. of Breakdown Voltage
VCE(on)
Collector-to-Emitter Saturation Voltage
600
0.55
1.65
2.05
2.10
VGE(th)
Gate Threshold Voltage
4.0 —
ΔVGE(th)/ΔTJ Threshold Voltage Temperature Coeff.
— -19
gfe Forward Transconductance
— 50
ICES
Collector-to-Emitter Leakage Current
— 1.5
— 1.4
IGES Gate-to-Emitter Leakage Current
VFM Diode Forward Voltage Drop
——
— 2.3
— 1.5
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Max.
1.95
6.5
100
±200
3.3
Units
Conditions
V VGE = 0V, IC = 100µA
V/°C VGE = 0V, IC = 3mA (25°C-175°C)
IC = 75A, VGE = 15V, TJ = 25°C
V IC = 75A, VGE = 15V, TJ = 150°C
IC = 75A, VGE = 15V, TJ = 175°C
V VCE = VGE, IC = 2.1mA
mV/°C VCE = VGE, IC = 2.1mA (25°C-175°C)
S VCE = 50V, IC = 75A, PW = 20µs
µA VGE = 0V, VCE = 600V
mA VGE = 0V, VCE = 600V, TJ = 175°C
nA VGE = ±20V
V IF = 18A
IF = 18A, TJ = 175°C
Qg
Qge
Qgc
Eon
Eoff
Etotal
td(on)
tr
td(off)
tf
Eon
Eoff
Etotal
td(on)
tr
td(off)
tf
Cies
Coes
Cres
RBSOA
Parameter
Total Gate Charge
Gate-to-Emitter Charge
Gate-to-Collector Charge
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
Turn-Off delay time
Fall time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
Turn-Off delay time
Fall time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Reverse Bias Safe Operating Area
Min.
Typ.
140
40
60
2.4
2.2
4.6
85
86
222
53
3.1
2.8
5.9
67
92
227
78
4720
270
140
Max
FULL SQUARE
SCSOA
Short Circuit Safe Operating Area
5
Erec
Reverse Recovery Energy of the Diode
trr Diode Reverse Recovery Time
Irr Peak Reverse Recovery Current
Notes:
VCC = 80% (VCES), VGE = 20V, L = 400µH, RG = 10Ω.
Refer to AN-1086 for guidelines for measuring V(BR)CES safely.
Pulse width limited by max. junction temperature.
Rθ is measured at TJ of approximately 90°C.
Values influenced by parasitic L and C in measurement.
fsw =40KHz, refer to figure 26.
——
210 —
90 —
26 —
Units
Conditions
IC = 75A
nC VGE = 15V
VCC = 400V
mJ IC = 75A, VCC = 400V, VGE=15V
RG = 10Ω, L = 400µH, TJ = 25°C
Energy losses include tail & diode
ns reverse recovery 
mJ IC = 75A, VCC = 400V, VGE=15V
RG = 10Ω, L = 400µH, TJ = 175°C
Energy losses include tail & diode
ns reverse recovery 
VGE = 0V
pF VCC = 30V
f = 1.0MHz
TJ = 175°C, IC = 300A
VCC = 480V, Vp 600V
VGE = +20V to 0V
µs
TJ = 150°C,VCC = 400V, Vp 600V
VGE = +15V to 0V
µJ TJ = 175°C
ns VCC = 400V, IF = 18A
A VGE = 15V, Rg = 10Ω
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June 17, 2014

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