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D1170 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - 2SD1170 - Inchange Semiconductor

भाग संख्या D1170
समारोह 2SD1170
मैन्युफैक्चरर्स Inchange Semiconductor 
लोगो Inchange Semiconductor लोगो 
पूर्व दर्शन
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<?=D1170?> डेटा पत्रक पीडीएफ

D1170 pdf
INCHANGE Semiconductor
www.DataSheet4U.com
isc Silicon NPN Darlington Power Transistor
isc Product Specification
2SD1170
ELECTRICAL CHARACTERISTICS
Tj=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0 120 V
VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB=B 3mA
VBE(sat) Base-Emitter Saturation Voltage
IC= 3A; IB=B 3mA
ICBO Collector Cutoff Current
VCB= 120V; IE= 0
IEBO Emitter Cutoff Current
VEB= 6V; IC= 0
1.5 V
2.0 V
10 μA
10 μA
hFE DC Current Gain
i.cnCOB Output Capacitance
.iscsemfT Current-Gain—Bandwidth Product
Switching Times
wwwton Turn-on Time
IC= 3A; VCE= 2V
IE= 0; VCB= 10V; ftest= 1MHz
IE= -1A; VCE= 12V
2000
70
50
0.5
tstg Storage Time
VCC= 30V, RL= 10Ω,
IC= 3A; IB1= -IB2= 3mA,
5.5
tf Fall Time
1.5
pF
MHz
μs
μs
μs
isc Websitewww.iscsemi.cn
2

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डाउनलोड[ D1170 Datasheet.PDF ]


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