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IRGS4086PbF डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - PDP Trench IGBT - International Rectifier

भाग संख्या IRGS4086PbF
समारोह PDP Trench IGBT
मैन्युफैक्चरर्स International Rectifier 
लोगो International Rectifier लोगो 
पूर्व दर्शन
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<?=IRGS4086PbF?> डेटा पत्रक पीडीएफ

IRGS4086PbF pdf
IRGB/S4086PbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
BVCES
Collector-to-Emitter Breakdown Voltag 300
∆ΒVCES/TJ Breakdown Voltage Temp. Coefficient –––
–––
–––
VCE(on)
Static Collector-to-Emitter Voltage
–––
–––
–––
VGE(th)
VGE(th)/TJ
ICES
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Collector-to-Emitter Leakage Current
2.6
–––
–––
–––
–––
IGES
Gate-to-Emitter Forward Leakage
–––
Gate-to-Emitter Reverse Leakage
–––
gfe Forward Transconductance
Qg Total Gate Charge
Qgc Gate-to-Collector Charge
td(on)
Turn-On delay time
tr Rise time
td(off)
Turn-Off delay time
tf Fall time
td(on)
Turn-On delay time
tr Rise time
td(off)
Turn-Off delay time
tf Fall time
–––
–––
–––
–––
0.29
1.29
1.49
1.90
2.57
2.27
–––
-11
2.0
5.0
100
–––
–––
29
65
22
36
31
112
65
30
33
145
98
–––
–––
1.55
1.67
2.10
2.96
–––
5.0
–––
25
–––
–––
100
-100
–––
–––
–––
V VGE = 0V, ICE = 1 mA
eV/°C Reference to 25°C, ICE = 1mA
VGE = 15V, ICE = 25A
eVGE = 15V, ICE = 40A
eV VGE = 15V, ICE = 70A
eVGE = 15V, ICE = 120A
VGE = 15V, ICE = 70A, TJ = 150°C
V VCE = VGE, ICE = 500µA
mV/°C
µA VCE = 300V, VGE = 0V
VCE = 300V, VGE = 0V, TJ = 100°C
VCE = 300V, VGE = 0V, TJ = 150°C
nA VGE = 30V
VGE = -30V
S VCE = 25V, ICE = 25A
enC VCE = 200V, IC = 25A, VGE = 15V
IC = 25A, VCC = 196V
ns RG = 10, L=200µH, LS= 200nH
TJ = 25°C
IC = 25A, VCC = 196V
ns RG = 10, L=200µH, LS= 200nH
TJ = 150°C
tst
EPULSE
Shoot Through Blocking Time
Energy per Pulse
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
LC Internal Collector Inductance
100 ––– –––
––– 1075 –––
––– 1432 –––
––– 2250 –––
––– 110 –––
––– 58 –––
––– 5.0 –––
ns VCC = 240V, VGE = 15V, RG= 5.1
L = 220nH, C= 0.40µF, VGE = 15V
µJ VCC = 240V, RG= 5.1Ω, TJ = 25°C
L = 220nH, C= 0.40µF, VGE = 15V
VCC = 240V, RG= 5.1Ω, TJ = 100°C
VGE = 0V
pF VCE = 30V
ƒ = 1.0MHz,
See Fig.13
Between lead,
nH 6mm (0.25in.)
LE Internal Emitter Inductance
––– 13 –––
from package
and center of die contact
Notes:
 Half sine wave with duty cycle = 0.1, ton=2µsec.
‚ Rθ is measured at TJ of approximately 90°C.
2
ƒ Pulse width 400µs; duty cycle 2%.
„ When mounted on 1" square PCB (FR-4 or G-10 Material).
For recomended footprint and soldering techniques refer
to application note #AN-994.
www.irf.com

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