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IRFI4321PBF डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Power MOSFET - International Rectifier

भाग संख्या IRFI4321PBF
समारोह Power MOSFET
मैन्युफैक्चरर्स International Rectifier 
लोगो International Rectifier लोगो 
पूर्व दर्शन
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<?=IRFI4321PBF?> डेटा पत्रक पीडीएफ

IRFI4321PBF pdf
IRFI4321PbF
Static @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min.
V(BR)DSS
Drain-to-Source Breakdown Voltage
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
Gate Threshold Voltage
IDSS Drain-to-Source Leakage Current
150
–––
–––
3.0
–––
–––
IGSS Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
–––
–––
RG(int)
Internal Gate Resistance
–––
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min.
gfs Forward Transconductance
50
Qg Total Gate Charge
Qgs Gate-to-Source Charge
Qgd Gate-to-Drain ("Miller") Charge
td(on)
Turn-On Delay Time
tr Rise Time
td(off)
Turn-Off Delay Time
tf Fall Time
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
190
12.2
–––
–––
–––
–––
–––
0.8
Typ.
–––
73
24
20
18
29
27
20
4440
390
84
Max. Units
Conditions
––– V VGS = 0V, ID = 250µA
––– mV/°C Reference to 25°C, ID = 1mAe
16 mVGS = 10V, ID = 20A e
5.0 V VDS = VGS, ID = 250µA
20 µA VDS = 150V, VGS = 0V
1.0 mA VDS = 150V, VGS = 0V, TJ = 125°C
100 nA VGS = 20V
-100
VGS = -20V
–––
Max. Units
Conditions
––– S VDS = 50V, ID = 20A
110 nC ID = 20A
––– VDS = 75V
––– VGS = 10V e
––– ns VDD = 75V
––– ID = 20A
––– RG = 2.5
––– VGS = 10V e
––– pF VGS = 0V
––– VDS = 50V
––– ƒ = 1.0MHz
Diode Characteristics
Symbol
Parameter
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
(Body Diode) c
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IRRM Reverse Recovery Current
ton Forward Turn-On Time
Min. Typ. Max. Units
Conditions
––– ––– 34 A MOSFET symbol
––– ––– 140
showing the
A integral reverse
G
D
––– ––– 1.3
––– 86 130
––– 310 470
––– 6.7 –––
p-n junction diode.
V TJ = 25°C, IS = 20A, VGS = 0V e
ns ID = 20A
nC VR = 128V,
A di/dt = 100A/µs e
S
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
 Repetitive rating; pulse width limited by max. junction
temperature.
‚ Limited by TJmax, starting TJ = 25°C, L = 0.85mH
RG = 25, IAS = 20A, VGS =10V. Part not recommended for use
above this value.
ƒ Pulse width 400µs; duty cycle 2%.
„ Rθ is measured at TJ approximately 90°C
2 www.irf.com

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डाउनलोड[ IRFI4321PBF Datasheet.PDF ]


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