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4415GH डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - AP4415GH - Advanced Power Electronics

भाग संख्या 4415GH
समारोह AP4415GH
मैन्युफैक्चरर्स Advanced Power Electronics 
लोगो Advanced Power Electronics लोगो 
पूर्व दर्शन
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<?=4415GH?> डेटा पत्रक पीडीएफ

4415GH pdf
AP4415GH/J
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
ΔBVDSS/ΔTj
RDS(ON)
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VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Drain-Source Breakdown Voltage
VGS=0V, ID=-250uA
Breakdown Voltage Temperature Coefficient Reference to 25, ID=-1mA
Static Drain-Source On-Resistance2 VGS=-10V, ID=-16A
VGS=-4.5V, ID=-12A
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current (Tj=25oC)
Drain-Source Leakage Current (Tj=150oC)
Gate-Source Leakage
Total Gate Charge2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VDS=VGS, ID=-250uA
VDS=-10V, ID=-16A
VDS=-30V, VGS=0V
VDS=-24V, VGS=0V
VGS=±25V
ID=-16A
VDS=-24V
VGS=-4.5V
VDS=-15V
ID=-16A
RG=3.3Ω,VGS=-10V
RD=0.94Ω
VGS=0V
VDS=-25V
f=1.0MHz
-35 - - V
- -0.02 - V/
- - 36 mΩ
- - 60 mΩ
-1 - -3 V
- 18 -
S
- - -1 uA
- - -25 uA
- - ±100 nA
- 11 18 nC
- 2 - nC
- 4 - nC
- 10 - ns
- 52 - ns
- 20 - ns
- 7 - ns
- 990 1580 pF
- 220 - pF
- 150 - pF
Source-Drain Diode
Symbol
VSD
trr
Parameter
Forward On Voltage2
Reverse Recovery Time2
Qrr Reverse Recovery Charge
Test Conditions
IS=-16A, VGS=0V
IS=-16A, VGS=0V,
dI/dt=100A/µs
Min. Typ. Max. Units
- - -1.2 V
- 25 - ns
- 16 - nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
2/4

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