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IRFI4019HG-117P डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Digital Audio MOSFET - International Rectifier

भाग संख्या IRFI4019HG-117P
समारोह Digital Audio MOSFET
मैन्युफैक्चरर्स International Rectifier 
लोगो International Rectifier लोगो 
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IRFI4019HG-117P pdf
IRFI4019HG-117P
hElectrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
BVDSS
Drain-to-Source Breakdown Voltage
150 ––– ––– V VGS = 0V, ID = 250µA
∆ΒVDSS/TJ
RDS(on)
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
e––– 0.19 ––– V/°C Reference to 25°C, ID = 1mA
––– 80
95 mVGS = 10V, ID = 5.2A
VGS(th)
VGS(th)/TJ
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
3.0 ––– 4.9
V VDS = VGS, ID = 50µA
––– -11 ––– mV/°C
IDSS
Drain-to-Source Leakage Current
––– ––– 20
µA VDS = 150V, VGS = 0V
––– ––– 250
VDS = 150V, VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Forward Leakage
––– ––– 100 nA VGS = 20V
Gate-to-Source Reverse Leakage
––– ––– -100
VGS = -20V
gfs Forward Transconductance
11 ––– ––– S VDS = 50V, ID = 5.2A
Qg Total Gate Charge
––– 13 20
Qgs1
Pre-Vth Gate-to-Source Charge
––– 3.3 –––
VDS = 75V
Qgs2
Post-Vth Gate-to-Source Charge
––– 0.8 ––– nC VGS = 10V
Qgd Gate-to-Drain Charge
––– 3.9 –––
ID = 5.2A
Qgodr
Gate Charge Overdrive
––– 5.0 –––
See Fig. 6 and 19
Qsw Switch Charge (Qgs2 + Qgd)
––– 4.1 –––
RG(int)
td(on)
Internal Gate Resistance
Turn-On Delay Time
––– 2.5 –––
––– 7.0 –––
ÃeVDD = 75V, VGS = 10V
tr
td(off)
Rise Time
Turn-Off Delay Time
––– 6.6 –––
ID = 5.2A
––– 13 ––– ns RG = 2.4
tf Fall Time
––– 3.1 –––
Ciss Input Capacitance
––– 810 –––
VGS = 0V
Coss Output Capacitance
––– 100 ––– pF VDS = 25V
Crss
Reverse Transfer Capacitance
––– 15 –––
ƒ = 1.0MHz,
See Fig.5
Coss Effective Output Capacitance
––– 97 –––
VGS = 0V, VDS = 0V to 120V
LD Internal Drain Inductance
––– 4.5 –––
Between lead,
D
LS Internal Source Inductance
nH 6mm (0.25in.)
––– 7.5 –––
from package
G
and center of die contact
S
hDiode Characteristics
Parameter
IS @ TC = 25°C Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
Ù(Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
Min.
–––
–––
–––
–––
–––
Typ.
–––
–––
–––
57
140
Max. Units
Conditions
8.7 MOSFET symbol
A showing the
34 integral reverse
p-n junction diode.
e1.3 V TJ = 25°C, IS = 5.2A, VGS = 0V
e86 ns TJ = 25°C, IF = 5.2A
210 nC di/dt = 100A/µs
Notes:
 Repetitive rating; pulse width limited by max. junction temperature.
‚ Starting TJ = 25°C, L = 5.8mH, RG = 25, IAS = 5.2A.
ƒ Pulse width 400µs; duty cycle 2%.
2
„ Rθ is measured at TJ of approximately 90°C.
… Limited by Tjmax. See Figs. 14, 15, 17a, 17b for repetitive
avalanche information
† Specifications refer to single MosFET.
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अनुशंसा डेटापत्रक

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International Rectifier


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