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IRG7IC28UPBF डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - PDP TRENCH IGBT - International Rectifier

भाग संख्या IRG7IC28UPBF
समारोह PDP TRENCH IGBT
मैन्युफैक्चरर्स International Rectifier 
लोगो International Rectifier लोगो 
पूर्व दर्शन
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<?=IRG7IC28UPBF?> डेटा पत्रक पीडीएफ

IRG7IC28UPBF pdf
IRG7IC28UPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
BVCES
V(BR)ECS
∆ΒVCES/TJ
VCE(on)
VGE(th)
Collector-to-Emitter Breakdown Voltage 600
eEmitter-to-Collector Breakdown Voltage 15
Breakdown Voltage Temp. Coefficient
–––
–––
–––
Static Collector-to-Emitter Voltage
Gate Threshold Voltage
–––
–––
–––
2.2
–––
–––
0.57
1.25
1.42
1.70
1.96
2.97
1.75
–––
–––
–––
–––
–––
–––
1.95
–––
–––
–––
4.7
V VGE = 0V, ICE = 1.0mA
V VGE = 0V, ICE = 1.0A
eV/°C Reference to 25°C, ICE = 1.0mA
VGE = 15V, ICE = 12A
eVGE = 15V, ICE = 24A
eV VGE = 15V, ICE = 40A
eVGE = 15V, ICE = 70A
eVGE = 15V, ICE = 160A
eVGE = 15V, ICE = 40A, TJ = 150°C
V VCE = VGE, ICE = 250µA
VGE(th)/TJ Gate Threshold Voltage Coefficient
ICES Collector-to-Emitter Leakage Current
IGES
gfe
Qg
Qgc
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
tf
tst
EPULSE
Gate-to-Emitter Forward Leakage
Gate-to-Emitter Reverse Leakage
Forward Transconductance
Total Gate Charge
Gate-to-Collector Charge
Turn-On delay time
Rise time
Turn-Off delay time
Fall time
Turn-On delay time
Rise time
Turn-Off delay time
Fall time
Shoot Through Blocking Time
Energy per Pulse
ESD
Human Body Model
Machine Model
––– -11 ––– mV/°C
––– 0.5 20
VCE = 600V, VGE = 0V
––– 30 ––– µA VCE = 600V, VGE = 0V, TJ = 100°C
––– 90
VCE = 600V, VGE = 0V, TJ = 125°C
––– 305 –––
VCE = 600V, VGE = 0V, TJ = 150°C
––– ––– 100 nA VGE = 30V
––– ––– -100
VGE = -30V
––– 55 ––– S VCE = 25V, ICE = 40A
e––– 70 ––– nC VCE = 400V, IC = 40A, VGE = 15V
––– 25 –––
––– 30 –––
––– 35 –––
––– 260 –––
IC = 40A, VCC = 400V
ns RG = 22, L=100µH
TJ = 25°C
––– 145 –––
––– 25 –––
––– 40 –––
––– 280 –––
––– 320 –––
IC = 40A, VCC = 400V
ns RG = 22, L=100µH
TJ = 150°C
100 ––– ––– ns VCC = 240V, VGE = 15V, RG= 5.1
––– 770 –––
L = 220nH, C= 0.40µF, VGE = 15V
µJ VCC = 240V, RG= 5.1Ω, TJ = 25°C
––– 930 –––
L = 220nH, C= 0.40µF, VGE = 15V
VCC = 240V, RG= 5.1Ω, TJ = 100°C
Class H1C (2000V)
(Per JEDEC standard JESD22-A114)
Class M4 (425V)
(Per EIA/JEDEC standard EIA/JESD22-A115)
Cies Input Capacitance
Coes Output Capacitance
Cres Reverse Transfer Capacitance
LC Internal Collector Inductance
––– 1880 –––
––– 75 –––
––– 45 –––
––– 4.5 –––
VGE = 0V
pF VCE = 30V
ƒ = 1.0MHz
Between lead,
nH 6mm (0.25in.)
LE Internal Emitter Inductance
––– 7.5 –––
from package
and center of die contact
Notes:
 Half sine wave with duty cycle <= 0.02, ton=1.0µsec.
‚ Rθ is measured at TJ of approximately 90 °C.
ƒ Pulse width 400µs; duty cycle 2%.
2 www.irf.com

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