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IRGS4055PBF डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - PDP Trench IGBT - International Rectifier

भाग संख्या IRGS4055PBF
समारोह PDP Trench IGBT
मैन्युफैक्चरर्स International Rectifier 
लोगो International Rectifier लोगो 
पूर्व दर्शन
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<?=IRGS4055PBF?> डेटा पत्रक पीडीएफ

IRGS4055PBF pdf
IRGB/S4055PbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
BVCES
∆ΒVCES/TJ
VCE(on)
Collector-to-Emitter Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Collector-to-Emitter Voltage
300
–––
–––
–––
–––
–––
–––
0.23
1.10
1.70
2.35
1.95
–––
–––
1.30
2.10
–––
–––
V
V/°C
V
V
V
V
VGE = 0V, ICE = 1 mA
eReference to 25°C, ICE = 1mA
VGE = 15V, ICE = 35A
eVGE = 15V, ICE = 110A
eVGE = 15V, ICE = 200A
VGE = 15V, ICE = 110A, TJ = 150°C
VGE(th)
Gate Threshold Voltage
2.6 ––– 5.0
V VCE = VGE, ICE = 1mA
VGE(th)/TJ
ICES
IGES
gfe
Qg
Qgc
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
tf
Gate Threshold Voltage Coefficient
Collector-to-Emitter Leakage Current
Gate-to-Emitter Forward Leakage
Gate-to-Emitter Reverse Leakage
Forward Transconductance
Total Gate Charge
Gate-to-Collector Charge
Turn-On delay time
Rise time
Turn-Off delay time
Fall time
Turn-On delay time
Rise time
Turn-Off delay time
Fall time
––– -11 ––– mV/°C
––– 2.0 25 µA VCE = 300V, VGE = 0V
––– 100 –––
VCE = 300V, VGE = 0V, TJ = 150°C
––– ––– 100 nA VGE = 30V
––– ––– -100
VGE = -30V
––– 38 –––
––– 132 –––
S VCE = 25V, ICE = 35A
enC VCE = 200V, IC = 35A, VGE = 15V
––– 42 –––
— 44 57
IC = 35A, VCC = 180V
— 39 55 ns RG = 10, L=250µH, LS= 150nH
— 245 308
TJ = 25°C
— 152 198
— 42 —
— 40 —
— 362 —
— 309 —
IC = 35A, VCC = 180V
ns RG = 10, L=250µH, LS= 150nH
TJ = 150°C
tst
EPULSE
Ciss
Coss
Crss
LC
Shoot Through Blocking Time
Energy per Pulse
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Internal Collector Inductance
100 ––– –––
––– 705 –––
––– 915 –––
––– 4280 –––
––– 200 –––
––– 125 –––
––– 5.0 –––
ns VCC = 240V, VGE = 15V, RG= 5.1
L = 220nH, C= 0.40µF, VGE = 15V
µJ VCC = 240V, RG= 5.1Ω, TJ = 25°C
L = 220nH, C= 0.40µF, VGE = 15V
VCC = 240V, RG= 5.1Ω, TJ = 100°C
VGE = 0V
pF VCE = 30V
ƒ = 1.0MHz,
See Fig.13
Between lead,
nH 6mm (0.25in.)
LE Internal Emitter Inductance
––– 13 –––
from package
and center of die contact
Notes:
 Half sine wave with duty cycle = 0.25, ton=1µsec.
‚ Rθ is measured at TJ of approximately 90°C.
ƒ Pulse width 400µs; duty cycle 2%.
„ Calculated continuous current based on maximum allowable junction
temperature. Package limitation current is 70A.
2
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