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UGP7N60 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - 600V SMPS N-CHANNEL IGBT - UNISONIC TECHNOLOGIES

भाग संख्या UGP7N60
समारोह 600V SMPS N-CHANNEL IGBT
मैन्युफैक्चरर्स UNISONIC TECHNOLOGIES 
लोगो UNISONIC TECHNOLOGIES लोगो 
पूर्व दर्शन
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<?=UGP7N60?> डेटा पत्रक पीडीएफ

UGP7N60 pdf
UGP7N60
Preliminary
Insulated Gate Bipolar Transistor
ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified)
PARAMETER SYMBOL
RATINGS
UNIT
Collector-Emitter Voltage
Continuous Collector Current
TC=25°C
TC=110°C 14
Collector Current Pulsed (Note 2)
VCES 600
IC
ICM 56
34 A
V
A
A
Gate to Emitter Voltage Continuous
Gate to Emitter Voltage Pulsed
VGES ±20
VGEM ±30
V
V
Switching Safe Operating Area at TJ=150°C
Single Pulse Avalanche Energy at TC=25°C E
SSOA
AS
35 (at 600V)
25 (at 7A)
A
mJ
Power Dissipation Total at TC=25°C P
Power Dissipation Derating TC>25°C
D 125
1.0
W
W/°C
Junction Temperature
Storage Temperature Range
TJ -55~
TSTG -55~
+150
+150
°C
°C
Notes: 1. Absolute maximum ratings are stress ratings only and functional device operation is not implied.
Absolute maximum ratings are those values beyond which the device could be permanently damaged.
2. Pulse width limited by maximum junction temperature.
THERMAL CHARACTERISTICS
PARAMETER SYMBOL
Junction to Case
θJC 1.0
RATINGS
UNIT
°C/W
ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified)
PARAMETER SYMBOL
Collector-Emitter Breakdown Voltage
Emitter to Collector Breakdown Voltage
Collector-Emitter Leakage Current
Collector-Emitter Saturation Voltage
Gate to Emitter Threshold Voltage
Gate to Emitter Leakage Current
Switching SOA
Pulsed Avalanche Energy
Gate to Emitter Plateau Voltage
On-State Gate Charge
Current Turn-On Delay Time
Current Rise Time
Current Turn-Off Delay Time
Current Fall Time
Note: 1.Pulse Test: Pulse width50μs.
BVCES
BVECS
ICES
VCE(SAT)
VGE(TH)
IGES
SSOA
EAS
VGEP
Qg(ON)
tdON)I
trI
tdOFF)I
tfI
TEST CONDITIONS
IC=250µA, VGE=0V 600
IC=10mA, VGE=0V 20
VCE=600V
TJ=25°C
TJ=125°C
IC=7A, VGE=15V
TJ=25°C
TJ=125°C
IC=250µA
VGE=±20V
TJ=150°C, RG=25, VGE=15V
L=100µH, VGE=600V
ICE=7A, L=500µH
IC=7A, VCE=80V
IC=7A, VCE=300V
VGE=15V
VGE=20V
IGBT and Diode at TJ=25°C,
ICE=7A, VGE=13.5V, RG=50,
RL=1, Test Circuit (Note 1)
MIN TYP MAX UNIT
V
V
250 µA
2 mA
1.3 2.7 V
1 2.2 V
4.5 5.9 7.2 V
±250 nA
35 A
25
10
37
48
400
2.6
300
2
45
60
mJ
V
nC
nC
ns
µs
ns
µs
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
UGP7N60600V SMPS N-CHANNEL IGBTUNISONIC TECHNOLOGIES
UNISONIC TECHNOLOGIES


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