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4N30Z डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - 40A 300V N-CHANNEL POWER MOSFET - UNISONIC TECHNOLOGIES

भाग संख्या 4N30Z
समारोह 40A 300V N-CHANNEL POWER MOSFET
मैन्युफैक्चरर्स UNISONIC TECHNOLOGIES 
लोगो UNISONIC TECHNOLOGIES लोगो 
पूर्व दर्शन
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<?=4N30Z?> डेटा पत्रक पीडीएफ

4N30Z pdf
4N30Z
Power MOSFET
„ ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL
RATINGS
UNIT
Drain-Source Voltage
Gate-Source Voltage
VDSS 300
VGSS ±20
V
V
Continuous Drain Current
ID
4A
Avalanche Current
IAR
4A
Avalanche Energy
Single Pulsed
Repetitive
EAS 52
EAR
52
mJ
mJ
Power Dissipation
Junction Temperature
PD 1.14
TJ
+150
W
°C
Storage Temperature
TSTG -55~
+150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
„ ELECTRICAL CHARACTERISTICS
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
Forward
Reverse V
BVDSS I
IDSS
IGSS
D=250µA, VDS=0V 300
VDS=300V
VGS=+20V, VDS=0V
GS=-20V, VDS=0V
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-State Resistance
VGS(TH)
RDS(ON)
ID=250µA
VGS=10V, ID=4A
DYNAMIC PARAMETERS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
CISS
COSS
CRSS
VGS=0V, VDS=25V, f=1MHz
SWITCHING PARAMETERS
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall-Time
QG
QGS
QGD
tD(ON)
tR
tD(OFF)
tF
VDD=50V, ID=4A, IG=100µA,
VGS=10V
VDD=30V, ID=4A, RG=25,
VGS=0~10V
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
IS
Maximum Body-Diode Pulsed Current
ISM
Drain-Source Diode Forward Voltage
VSD IS=4A 0.1
MIN TYP MAX UNIT
V
1 µA
±10 µA
±10 µA
2 4V
2
850 pF
250 pF
200 pF
3.2
0.64
1.6
6
38
11
13
nC
nC
nC
ns
ns
ns
ns
4A
16 A
1.48 V
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 3
VER.A

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