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P11NB40FP डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - STP11NB40FP - STMicroelectronics

भाग संख्या P11NB40FP
समारोह STP11NB40FP
मैन्युफैक्चरर्स STMicroelectronics 
लोगो STMicroelectronics लोगो 
पूर्व दर्शन
1 Page
		
<?=P11NB40FP?> डेटा पत्रक पीडीएफ

P11NB40FP pdf
STP11NB40/FP
THERMAL DATA
Rthj-case
R th j -a mb
R t h c - s i nk
Tl
Thermal Resistance Junction-case
Max
The rmal Res istance Junc tion- ambien t
Max
Ther mal Resistanc e Case-sink
Typ
Maximum Lead Tem per ature For Sold ering Purpose
TO-220
1.0
TO-220FP
3.12
62 .5
0. 5
30 0
oC/W
o C/ W
o C/ W
oC
AVALANCHE CHARACTERISTICS
Symbo l
IAR
EAS
Para met er
Avalan che Current , Repet itive or Not-Repet itive
(pulse width limited by Tj ma x)
Single Pu lse Ava lanche En ergy
(startin g Tj =2 5 oC, ID =I AR,V DD =5 0 V)
Max Valu e
10. 7
530
Unit
A
mJ
ELECTRICAL CHARACTERISTICS (Tcase =2 5 oC unless otherwise specified)
OFF
Symbo l
V (BR)DSS
IDS S
IGS S
Pa ram et e r
Test Con dit ions
Dr ain- source
Break down Voltage
ID =2 50 µ AV GS =0
Zero G ate Voltage
VDS =M ax Rating
Dr ain Current (VGS =0 ) VDS = Max Rating
Tc =1 25 oC
Gate-body Le akage
Cur ren t (VDS =0 )
VGS = ± 30 V
M i n.
400
T yp.
Max.
U n it
V
1
50
± 10 0
µA
µA
nA
ON ()
Symbo l
VGS (th)
R D S( on)
ID(o n)
Pa ram et e r
Test Con dit ions
Gate Threshold
Vo l t ag e
VDS =V GS ID = 250 µA
Stat ic Drai n-source O n VGS =1 0V ID = 5.3 A
Res istanc e
On Stat e Drain Cu rrent VDS >I D(o n) xR DS(on )max
VGS =1 0 V
Min. T yp.
345
Max.
U n it
V
0.48 0.5 5
10. 7
A
DYNAMIC
Symbo l
Pa ram et e r
gfs ()F orward
Trans cond uctanc e
Cis s
Cos s
Crs s
Input Cap acitan ce
Output Ca pac itance
Revers e T ransfer
Capac it ance
Test Con dit ions
VDS >I D(o n) xR DS(on )ma x ID =5 .3 A
M i n.
5
T yp.
6.5
Max.
U n it
S
VDS =2 5 V f = 1 MHz VGS = 0
12 50
21 0
22
1 625
284
30
pF
pF
pF
2/9

विन्यास 9 पेज
डाउनलोड[ P11NB40FP Datasheet.PDF ]


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अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
P11NB40FPSTP11NB40FPSTMicroelectronics
STMicroelectronics


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