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IRGS4615DPBF डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Power MOSFET - International Rectifier

भाग संख्या IRGS4615DPBF
समारोह Power MOSFET
मैन्युफैक्चरर्स International Rectifier 
लोगो International Rectifier लोगो 
पूर्व दर्शन
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<?=IRGS4615DPBF?> डेटा पत्रक पीडीएफ

IRGS4615DPBF pdf
IRGS/B4615DPbF
Thermal Resistance
RθJC
RθJC
RθCS
RθJA
dParameter
Thermal Resistance, Junction-to-Case -(each IGBT)
dThermal Resistance, Junction-to-Case -(each Diode)
Thermal Resistance, Case-to-Sink (flat, greased surface)
hThermal Resistance, Junction-to-Ambient (PCB mount D2PAK)
Thermal Resistance, Junction-to-Ambient ( Socket mount: TO-220)
Min.
–––
–––
–––
–––
–––
Typ.
–––
–––
0.5
–––
–––
Max.
1.51
3.66
–––
40
62
Units
°C/W
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Param e te r
Min.
V(BR)CES
Collector-to-Emitter Breakdown Voltage 600
ΔV(BR)CES/ΔTJ Temperature Coeff. of Breakdown Voltage —
Typ.
0.3
1.55
Max. Units
Conditions
e— V VGE = 0V, Ic =100 μA
— V/°C VGE = 0V, Ic = 250μA ( 25 -175oC )
1.85
IC = 8.0A, VGE = 15V, TJ = 25°C
VCE(on)
Collector-to-Emitter Saturation Voltage
— 1.95 —
V IC = 8.0A, VGE = 15V, TJ = 150°C
— 2.00 —
IC = 8.0A, VGE = 15V, TJ = 175°C
VGE(th)
ΔVGE(th)/ΔTJ
gfe
Gate Threshold Voltage
Threshold Voltage temp. coefficient
Forward Transconductance
4.0 — 6.5 V VCE = VGE, IC = 250μA
-18 — mV/°C VCE = VGE, IC = 250μA ( 25 -175oC )
— 5.6 —
S VCE = 50V, IC = 8.0A, PW =80μs
ICES
Collector-to-Emitter Leakage Current
— — 25
— 400 —
μA VGE = 0V,VCE = 600V
VGE = 0V, VCE = 600V, TJ =175°C
VFM Diode Forward Voltage Drop
— 1.80 2.8
— 1.30 —
V IF = 8.0A
IF = 8.0A, TJ = 175°C
IGES Gate-to-Emitter Leakage Current
— — ±100 nA VGE = ± 20 V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Param e te r
Min. Typ. Max. Units
Conditions
Qg
Qge
Qgc
Eon
Eoff
Etotal
td(on)
tr
td(off)
tf
Eon
Eoff
Etotal
td(on)
tr
td(off)
tf
Cies
Coes
Cres
RBSOA
Total Gate Charge (turn-on)
Gate-to-Emitter Charge (turn-on)
Gate-to-Collector Charge (turn-on)
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
Turn-Off delay time
Fall time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
Turn-Off delay time
Fall time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Reverse Bias Safe Operating Area
SCSOA
Erec
trr
Irr
Short Circuit Safe Operating Area
Reverse recovery energy of the diode
Diode Reverse recovery time
Peak Reverse Recovery Current
— 19 —
—5 —
—8 —
— 70 —
— 145 —
— 215 —
— 30 —
— 15 —
— 95 —
— 20 —
— 165 —
— 240 —
— 405 —
— 28 —
— 17 —
— 117 —
— 35 —
— 535 —
— 45 —
— 15 —
FULL SQUARE
5 ——
— 165 —
— 60 —
— 14 —
IC = 8.0A
nC VCC = 400V
VGE = 15V
IC = 8.0A, VCC = 400V, VGE = 15V
gμJ RG = 47Ω, L=1mH, LS= 150nH, TJ = 25°C
Energy losses include tail and diode reverse recovery
IC = 8.0A, VCC = 400V
ns RG = 47Ω, L=1mH, LS= 150nH
TJ = 25°C
IC = 8.0A, VCC = 400V, VGE = 15V
gμJ RG = 47Ω, L=1mH, LS= 150nH, TJ = 175°C
Energy losses include tail and diode reverse recovery
IC = 8.0A, VCC = 400V
ns RG = 47Ω, L=1mH, LS= 150nH
TJ = 175°C
VGE = 0V
pF VCC = 30V
f = 1Mhz
TJ = 175°C, IC = 32A
VCC = 480V, Vp =600V
RG = 47Ω, VGE = +20V to 0V
μs
VCC = 400V, Vp =600V
RG = 47Ω, VGE = +15V to 0V
μJ TJ = 175oC
ns VCC = 400V, IF = 8.0A
A VGE = 15V, Rg = 47Ω, L=1mH, LS=150nH
Notes:
 VCC = 80% (VCES), VGE = 20V, L = 100 μH, RG = 47 Ω.
‚ Rθ is measured at TJ approximately 90°C.
ƒ Refer to AN-1086 for guidelines for measuring V(BR)CES safely.
„ Pulse width limited by max. junction temperature.
… Values influenced by parasitic L and C in measurement
† When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application
note #AN-994: http://www.irf.com/technical-info/appnotes/an-994.pdf
2 www.irf.com © 2013 International Rectifier
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November 14, 2014

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डाउनलोड[ IRGS4615DPBF Datasheet.PDF ]


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