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IRGS4064DPBF डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Power MOSFET - International Rectifier

भाग संख्या IRGS4064DPBF
समारोह Power MOSFET
मैन्युफैक्चरर्स International Rectifier 
लोगो International Rectifier लोगो 
पूर्व दर्शन
1 Page
		
<?=IRGS4064DPBF?> डेटा पत्रक पीडीएफ

IRGS4064DPBF pdf
IRGS4064DPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
V(BR)CES
Collector-to-Emitter Breakdown Voltage
600 —
Δ V(BR)CES/Δ TJ Temperature Coeff. of Breakdown Voltage — 0.47
— 1.6
1.91
V
V/°C
VCE(on)
Collector-to-Emitter Saturation Voltage
— 1.9
— 2.0
V
VGE(th)
Δ VGE(th)/Δ TJ
gfe
Gate Threshold Voltage
Threshold Voltage temp. coefficient
Forward Transconductance
4.0 —
6.5
V
— -11
— mV/°C
— 6.9
S
ICES
Collector-to-Emitter Leakage Current
——
25
μA
— 328
VFM Diode Forward Voltage Drop
— 2.5
— 1.7
3.1
V
IGES Gate-to-Emitter Leakage Current
— — ±100
nA
Conditions
fVGE = 0V, IC = 100μA
VGE = 0V, IC = 500μA (25°C-175°C)
IC = 10A, VGE = 15V, TJ = 25°C
IC = 10A, VGE = 15V, TJ = 150°C
IC = 10A, VGE = 15V, TJ = 175°C
VCE = VGE, IC = 275μA
VCE = VGE, IC = 1.0mA (25°C - 175°C)
VCE = 50V, IC = 10A, PW = 80μs
VGE = 0V, VCE = 600V
VGE = 0V, VCE = 600V, TJ = 175°C
IF = 10A
IF = 10A, TJ = 175°C
VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
gMin. Typ. Max. Units
Conditions
Qg
Qge
Qgc
Eon
Eoff
Etotal
td(on)
tr
td(off)
tf
Eon
Eoff
Etotal
td(on)
tr
td(off)
tf
Cies
Coes
Cres
RBSOA
SCSOA
Erec
trr
Irr
Total Gate Charge (turn-on)
Gate-to-Emitter Charge (turn-on)
Gate-to-Collector Charge (turn-on)
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
Turn-Off delay time
Fall time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
Turn-Off delay time
Fall time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Reverse Bias Safe Operating Area
Short Circuit Safe Operating Area
Reverse Recovery Energy of the Diode
Diode Reverse Recovery Time
Peak Reverse Recovery Current
— 21
— 5.3
— 8.9
— 29
— 200
— 229
— 27
— 15
— 79
— 21
— 99
— 316
— 415
— 27
— 16
— 98
— 33
— 594
— 49
— 17
32
8.0
13
40
281
313
37
23
90
29
FULL SQUARE
5—
— 191
— 62
— 16
IC = 10A
nC VGE = 15V
VCC = 400V
IC = 10A, VCC = 400V, VGE = 15V
μJ RG = 22Ω, L = 1.0mH, TJ = 25°C
E nergy los s es include tail & diode revers e recovery
IC = 10A, VCC = 400V, VGE = 15V
ns RG = 22Ω, L = 1.0mH, TJ = 25°C
IC = 10A, VCC = 400V, VGE = 15V
μJ RG=22Ω, L=1.0mH, TJ = 175°C
E nergy los s es include tail & diode revers e recovery
IC = 10A, VCC = 400V, VGE = 15V
ns RG = 22Ω, L = 1.0mH, TJ = 175°C
pF VGE = 0V
VCC = 30V
f = 1.0Mhz
TJ = 175°C, IC = 40A
VCC = 480V, Vp =600V
Rg = 22Ω, VGE = +15V to 0V
μs VCC = 400V, Vp =600V
Rg = 22Ω, VGE = +15V to 0V
μJ TJ = 175°C
ns VCC = 400V, IF = 10A
A VGE = 15V, Rg = 22Ω, L=1.0mH
Ref.Fig
CT 6
5,6,7,9,
10 ,11
9,10,11,12
8
R ef .F ig
24
CT 1
CT 4
CT 4
13,15
CT 4
WF 1,WF 2
14,16
CT 4
WF 1,WF 2
22
4
CT 2
22, CT 3
WF 4
17,18,19
20,21
WF 3
Notes:
VCC = 80% (VCES), VGE = 15V, L = 28 μH, RG = 22 Ω.
‚ Pulse width limited by max. junction temperature.
ƒRθ is measured at TJ approximately 90°C
„Refer to AN-1086 for guidelines for measuring V(BR)CES safely
… Maximum limits are based on statistical sample size characterization
2
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