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IRGS4620DPBF डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Power MOSFET - International Rectifier

भाग संख्या IRGS4620DPBF
समारोह Power MOSFET
मैन्युफैक्चरर्स International Rectifier 
लोगो International Rectifier लोगो 
पूर्व दर्शन
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<?=IRGS4620DPBF?> डेटा पत्रक पीडीएफ

IRGS4620DPBF pdf
IRGS/B/P4620D/EPbF
Thermal Resistance
RθJC (IGBT)
RθJC (Diode)
Parameter
Thermal Resistance Junction-to-Case (D2Pak, TO-220)
Thermal Resistance Junction-to-Case (TO-247)
Thermal Resistance Junction-to-Case (D2Pak, TO-220)
Thermal Resistance Junction-to-Case (TO-247)
RθCS
RθJA
Thermal Resistance, Case-to-Sink (flat, greased surface)
Thermal Resistance, Junction-to-Ambient (PCB Mount - D2Pak)
Thermal Resistance, Junction-to-Ambient (Socket Mount –TO-220, TO-247)
Min.
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
–––
–––
–––
0.50
40
80
Max.
1.07
1.12
3.66
3.71
–––
–––
–––
Units
°C/W
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ.
V(BR)CES
Collector-to-Emitter Breakdown Voltage
ΔV(BR)CES/ΔTJ Temperature Coeff. of Breakdown Voltage
600
0.40
1.55
VCE(on)
Collector-to-Emitter Saturation Voltage
— 1.90
— 1.97
VGE(th)
ΔVGE(th)/ΔTJ
gfe
Gate Threshold Voltage
Threshold Voltage Temp. Coefficient
Forward Transconductance
4.0 —
— -18
— 7.7
ICES
Collector-to-Emitter Leakage Current
— 2.0
— 475
IGES Gate-to-Emitter Leakage Current
VFM Diode Forward Voltage Drop
——
— 2.1
— 1.6
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ.
Qg Total Gate Charge
— 25
Qge Gate-to-Emitter Charge
Qgc Gate-to-Collector Charge
— 7.0
— 11
Eon Turn-On Switching Loss
— 75
Eoff
Etotal
Turn-Off Switching Loss
Total Switching Loss
— 225
— 300
td(on) Turn-On delay time
tr Rise time
td(off)
Turn-Off delay time
— 31
— 17
— 83
tf Fall time
Eon Turn-On Switching Loss
— 24
— 185
Eoff Turn-Off Switching Loss
— 355
Etotal
td(on)
Total Switching Loss
Turn-On delay time
— 540
— 30
tr Rise time
— 18
td(off)
Turn-Off delay time
tf Fall time
— 102
— 41
Cies Input Capacitance
— 765
Coes Output Capacitance
Cres Reverse Transfer Capacitance
— 52
— 23
Max.
1.85
6.5
±100
3.1
Max
RBSOA
Reverse Bias Safe Operating Area
FULL SQUARE
SCSOA
Erec
trr
Irr
Short Circuit Safe Operating Area
Reverse Recovery Energy of the Diode
Diode Reverse Recovery Time
Peak Reverse Recovery Current
5.0 — —
— 280 —
— 68 —
— 19 —
Units
Conditions
V VGE = 0V, IC = 100µA
V/°C VGE = 0V, IC = 1mA (25°C-175°C)
IC = 12A, VGE = 15V, TJ = 25°C
V IC = 12A, VGE = 15V, TJ = 150°C
IC = 12A, VGE = 15V, TJ = 175°C
V VCE = VGE, IC = 350µA
mV/°C VCE = VGE, IC = 1.0mA (25°C-175°C)
S VCE = 50V, IC = 12A, PW = 80µs
µA VGE = 0V, VCE = 600V
VGE = 0V, VCE = 600V, TJ = 175°C
nA VGE = ±20V
V IF = 12A
IF = 12A, TJ = 175°C
Units
Conditions
IC = 12A
nC VGE = 15V
VCC = 400V
µJ IC = 12A, VCC = 400V, VGE=15V
RG = 22Ω, L = 200µH, LS = 150nH,
TJ = 25°C
ns Energy losses include tail & diode
reverse recovery
µJ IC = 12A, VCC = 400V, VGE=15V
RG = 22Ω, L = 200µH, LS = 150nH,
TJ = 175°C
ns Energy losses include tail & diode
reverse recovery
VGE = 0V
pF VCC = 30V
f = 1.0MHz
TJ = 175°C, IC = 48A
VCC = 480V, Vp 600V
RG = 22, VGE = +20V to 0V
µs
VCC = 400V, Vp 600V
RG = 22, VGE = +15V to 0V
µJ TJ = 175°C
ns VCC = 400V, IF = 12A, VGE = 15V,
A Rg = 22Ω, L = 200µH, LS = 150nH
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October 29, 2013
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