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IRFI4510GPBF डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Power MOSFET - International Rectifier

भाग संख्या IRFI4510GPBF
समारोह Power MOSFET
मैन्युफैक्चरर्स International Rectifier 
लोगो International Rectifier लोगो 
पूर्व दर्शन
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<?=IRFI4510GPBF?> डेटा पत्रक पीडीएफ

IRFI4510GPBF pdf
IRFI4510GPbF
Static @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
V(BR)DSS/TJ
RDS(on)
VGS(th)
IDSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Drain-to-Source Leakage Current
IGSS
RG(int)
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Internal Gate Resistance
100 ––– –––
V VGS = 0V, ID = 250μA
e––– 0.11 ––– V/°C Reference to 25°C, ID = 5mA
e––– 10.7 13.5 mVGS = 10V, ID = 21A
2.0 ––– 4.0
V VDS = VGS, ID = 100μA
––– ––– 20
μA VDS = 100V, VGS = 0V
––– ––– 250
VDS = 100V, VGS = 0V, TJ = 125°C
––– ––– 100 nA VGS = 20V
––– ––– -100
VGS = -20V
––– 0.6 –––
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Conditions
gfs Forward Transconductance
55 ––– –––
Qg Total Gate Charge
––– 54 81
Qgs Gate-to-Source Charge
––– 13 –––
Qgd Gate-to-Drain ("Miller") Charge
––– 16 –––
td(on) Turn-On Delay Time
––– 16 –––
tr Rise Time
––– 33 –––
td(off) Turn-Off Delay Time
––– 54 –––
tf Fall Time
––– 37 –––
Ciss Input Capacitance
––– 2998 –––
Coss Output Capacitance
––– 216 –––
Crss Reverse Transfer Capacitance
––– 103 –––
Coss eff. (ER) Effective Output Capacitance (Energy Related) ––– 261 –––
Coss eff. (TR) Effective Output Capacitance (Time Related) ––– 494 –––
Diode Characteristics
S VDS = 50V, ID = 21A
nC ID = 21A
eVDS = 50V
VGS = 10V
ns VDD = 65V
ID = 21A
eRG = 7.5
VGS = 10V
pF VGS = 0V
VDS = 50V
ƒ = 1.0MHz
hVGS = 0V, VDS = 0V to 80V , See Fig.11
VGS = 0V, VDS = 0V to 80V
Symbol
Parameter
Min. Typ. Max. Units
Conditions
IS Continuous Source Current
(Body Diode)
––– ––– 35
A MOSFET symbol
showing the
D
ISM Pulsed Source Current
Ù(Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IRRM Reverse Recovery Current
ton Forward Turn-On Time
––– ––– 180 A integral reverse
G
––– ––– 1.3
ep-n junction diode.
V TJ = 25°C, IS = 21A, VGS = 0V
––– 39 59
ns TJ = 25°C
VR = 85V
––– 47 71
TJ = 125°C
––– 63 95 nC TJ = 25°C
eIF = 21A
di/dt = 100A/μs
––– 90 135
TJ = 125°C
––– 2.9 ––– A TJ = 25°C
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
S
Notes:
 Repetitive rating; pulse width limited by max. junction
temperature.
‚ Limited by TJmax, starting TJ = 25°C, L = 0.93mH
RG = 50, IAS = 21A, VGS =10V. Part not recommended for use
above this value.
ƒ Pulse width 400μs; duty cycle 2%.
„ Ris measured at TJ approximately 90°C.
… Coss eff. (TR) is a fixed capacitance that gives the same charging
time as Coss while VDS is rising from 0 to 80% VDSS.
† Coss eff. (ER) is a fixed capacitance that gives the same energy as
Coss while VDS is rising from 0 to 80% VDSS.
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