DataSheet.in

IRFI4410ZGPBF डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Power MOSFET - International Rectifier

भाग संख्या IRFI4410ZGPBF
समारोह Power MOSFET
मैन्युफैक्चरर्स International Rectifier 
लोगो International Rectifier लोगो 
पूर्व दर्शन
1 Page
		
<?=IRFI4410ZGPBF?> डेटा पत्रक पीडीएफ

IRFI4410ZGPBF pdf
IRFI4410ZGPbF
Static @ TJ = 25°C (unless otherwise specified)
Symbol
Param eter
Mi n.
V( BR)DS S
Drain-to-Source Breakdown Voltage
V(BR)DSS/ TJ Breakdown Voltage Temp. Coefficient
RDS( on)
Static Drain-to-Source On-Resistance
VG S(th)
Gate Threshold Voltage
IDSS Drain-to-Source Leakage Current
100
–––
–––
2.0
–––
–––
IGSS Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
–––
–––
RG(int)
Internal Gate Resistance
–––
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol
Param eter
Mi n.
gfs Forward Transconductance
80
Qg
Qgs
Qgd
td( on)
tr
td( off)
tf
Ciss
Coss
Crs s
Coss eff. (ER)
Coss eff. (TR)
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capaci tance
Reverse Transfer Capaci tance
Effective Output Capacitance (Energy Related)
Effective Output Capacitance (Time Related)
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Ty p.
–––
95
7.9
–––
–––
–––
–––
–––
0.9
Ty p.
–––
81
18
23
15
27
43
30
4910
330
150
420
680
Max. Units
Conditions
––– V VGS = 0V, ID = 250μA
e––– mV/°C Reference to 25°C, ID = 5mA
e9.3 m VGS = 10V, ID = 26A
4.0 V VDS = VGS, ID = 150μA
20 μA VDS = 100V, VGS = 0V
250 VDS = 100V, VGS = 0V, TJ = 125°C
100 nA VGS = 20V
-100
VGS = -20V
–––
Max. Units
Conditions
––– S VDS = 50V, ID = 26A
110 nC ID = 26A
e––– VDS = 50V
––– VGS = 10V
––– ns VDD = 65V
––– ID = 26A
e––– RG = 2.7
––– VGS = 10V
––– pF VGS = 0V
––– VDS = 50V
––– ƒ = 1.0MHz
h––– VGS = 0V, VDS = 0V to 80V , See Fig.11
––– VGS = 0V, VDS = 0V to 80V
Diode Characteristics
Symbol
P ara meter
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
Ù(Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IRRM Reverse Recovery Current
ton Forward Turn-On Time
Min. Typ. Max. Units
Conditions
––– ––– 43 A MOSFET symbol
showing the
––– ––– 170 A integral reverse
G
––– ––– 1.3
ep-n junction diode.
V TJ = 25°C, IS = 26A, VGS = 0V
––– 47 71 ns TJ = 25°C
VR = 85V,
––– 54 81
TJ = 125°C
––– 110 160 nC TJ = 25°C
eIF = 26A
di/dt = 100A/μs
––– 140 210
TJ = 125°C
––– 2.5 ––– A TJ = 25°C
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
D
S
Notes:
 Repetitive rating; pulse width limited by max. junction
temperature.
‚ Limited by TJmax, starting TJ = 25°C, L = 0.91mH
RG = 25Ω, IAS = 26A, VGS =10V. Part not recommended for use
above this value.
ƒ Pulse width 400μs; duty cycle 2%.
„ Rθ is measured at TJ approximately 90°C
… Coss eff. (TR) is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS.
† Coss eff. (ER) is a fixed capacitance that gives the same energy as
Coss while VDS is rising from 0 to 80% VDSS.
2 www.irf.com
Free Datasheet http://www.Datasheet4U.com

विन्यास 8 पेज
डाउनलोड[ IRFI4410ZGPBF Datasheet.PDF ]


शेयर लिंक


अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
IRFI4410ZGPBFPower MOSFETInternational Rectifier
International Rectifier


भाग संख्याविवरणविनिर्माण
30L120CTSchottky RectifierPFC Device
PFC Device
AT28C010-12DKSpace 1-MBit (128K x 8) Paged Parallel EEPROMATMEL
ATMEL
B20NM50FDN-CHANNEL POWER MOSFETSTMicroelectronics
STMicroelectronics
D8442SD844SavantIC
SavantIC
FAE391-A20AM/FM Automotive Electronic TunerMitsumi
Mitsumi


Index : 0  1  2  3  4  5  6  7  8  9  A  B  C  D  E  F  G  H  I  J  K  L  M  N  O  P  Q  R  S  T  U  V  W  X  Y  Z



www.DataSheet.in    |   2017   |  संपर्क   |   खोज     |   English