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IRFI4110GPBF डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Power MOSFET - International Rectifier

भाग संख्या IRFI4110GPBF
समारोह Power MOSFET
मैन्युफैक्चरर्स International Rectifier 
लोगो International Rectifier लोगो 
पूर्व दर्शन
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<?=IRFI4110GPBF?> डेटा पत्रक पीडीएफ

IRFI4110GPBF pdf
IRFI4110GPbF
Static @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min.
V(BR)DSS
V(BR)DSS/TJ
RDS(on)
VGS(th)
IDSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Drain-to-Source Leakage Current
100
–––
–––
2.0
–––
–––
IGSS Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
–––
–––
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min.
gfs Forward Transconductance
260
Qg
Qgs
Qgd
RG
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Coss eff. (ER)
Coss eff. (TR)
Total Gate Charge
–––
Gate-to-Source Charge
–––
Gate-to-Drain ("Miller") Charge
–––
Gate Resistance
Turn-On Delay Time
–––
–––
Rise Time
–––
Turn-Off Delay Time
–––
Fall Time
–––
Input Capacitance
–––
Output Capacitance
–––
Reverse Transfer Capacitance
–––
hEffective Output Capacitance (Energy Related) –––
gEffective Output Capacitance (Time Related)
–––
Typ.
–––
0.11
3.7
–––
–––
–––
–––
–––
Typ.
–––
190
40
49
1.3
24
58
81
71
9540
680
300
760
1120
Max. Units
Conditions
–––
–––
4.5
4.0
20
250
100
-100
V VGS = 0V, ID = 250µA
™V/°C Reference to 25°C, ID = 5mA
fmVGS = 10V, ID = 43A
V VDS = VGS, ID = 250µA
µA VDS = 100V, VGS = 0V
VDS = 100V, VGS = 0V, TJ = 125°C
nA VGS = 20V
VGS = -20V
Max. Units
Conditions
––– S VDS = 50V, ID = 43A
290 nC ID = 43A
f––– VDS = 50V
––– VGS = 10V
–––
––– ns VDD = 65V
––– ID = 43A
f––– RG = 2.6
––– VGS = 10V
––– pF VGS = 0V
––– VDS = 50V
––– ƒ = 1.0MHz
h––– VGS = 0V, VDS = 0V to 80V
g––– VGS = 0V, VDS = 0V to 80V
Diode Characteristics
Symbol
Parameter
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
Ãdi(Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IRRM Reverse Recovery Current
ton Forward Turn-On Time
Min. Typ. Max. Units
Conditions
––– ––– 72 A MOSFET symbol
D
––– ––– 290
showing the
integral reverse
G
––– ––– 1.3
p-n junction diode.
fV TJ = 25°C, IS = 43A, VGS = 0V
S
––– 50 75 ns TJ = 25°C
VR = 85V,
––– 60 90
––– 100 150
TJ = 125°C
nC TJ = 25°C
fIF = 43A
di/dt = 100A/µs
––– 140 210
TJ = 125°C
––– 3.5 ––– A TJ = 25°C
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
 Repetitive rating; pulse width limited by max. junction
temperature.
‚ Limited by TJmax, starting TJ = 25°C, L = 0.077mH
RG = 25, IAS = 43A, VGS =10V. Part not recommended for use
above this value.
ƒ ISD 43A, di/dt 1600A/µs, VDD V(BR)DSS, TJ 175°C.
„ Pulse width 400µs; duty cycle 2%.
… Coss eff. (TR) is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS.
† Coss eff. (ER) is a fixed capacitance that gives the same energy as
Coss while VDS is rising from 0 to 80% VDSS.
‡ When mounted on 1" square PCB (FR-4 or G-10 Material). For recom-
mended footprint and soldering techniques refer to application note #AN-994.
ˆ Rθ is measured at TJ approximately 90°C.
2 www.irf.com
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