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IRFI3306GPBF डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Power MOSFET - International Rectifier

भाग संख्या IRFI3306GPBF
समारोह Power MOSFET
मैन्युफैक्चरर्स International Rectifier 
लोगो International Rectifier लोगो 
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IRFI3306GPBF pdf
  IRFI3306GPbF
Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified)  
Symbol
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
V(BR)DSS/TJ
RDS(on)
VGS(th)
IDSS
 
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Drain-to-Source Leakage Current
60 ––– ––– V VGS = 0V, ID = 250µA
––– 0.068 ––– V/°C Reference to 25°C, ID = 5.0mA
––– 3.3 4.2 m VGS = 10V, ID = 43A
2.0 ––– 4.0
V VDS = VGS, ID = 150µA
––– ––– 20 µA VDS = 60V, VGS = 0V
––– ––– 250  
VDS = 60V, VGS = 0V, TJ = 125°C
IGSS Gate-to-Source Forward Leakage
  Gate-to-Source Reverse Leakage
––– ––– 100 nA VGS = 20V
––– ––– -100  
VGS = -20V
RG(int)
Internal Gate Resistance
––– 0.72 ––– 
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)  
Symbol
Parameter
Min. Typ. Max. Units
Conditions
gfs
Qg
Qgs
Qgd
Qsync
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Total Gate Charge Sync. (Qg - Qgd)
89 ––– ––– S VDS = 25V, ID = 43A
––– 90 135  
ID = 43A
––– 22 ––– nC VDS = 30V
––– 26 –––  
VGS = 10V
––– 116 –––
ID = 43A, VDS =0V, VGS = 10V
td(on) Turn-On Delay Time
tr Rise Time
td(off) Turn-Off Delay Time
tf Fall Time
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Coss eff. (ER) Effective Output Capacitance (Energy Related)
Coss eff. (TR) Effective Output Capacitance (Time Related)
Diode Characteristics  
–––
–––
–––
–––
–––
–––
–––
–––
–––
15
30
45
33
4685
506
310
733
822
–––
––– ns
–––  
–––  
–––
–––  
––– pF
–––  
–––  
VDD = 39V
ID = 43A
RG = 2.7
VGS = 10V
VGS = 0V
VDS = 50V
ƒ = 1.0 MHz
VGS = 0V, VDS = 0V to 48V
VGS = 0V, VDS = 0V to 48V
Symbol
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
(Body Diode)
––– ––– 71
A MOSFET symbol
showing the
ISM
Pulsed Source Current
(Body Diode)
––– ––– 300
A integral reverse
p-n junction diode.
VSD
dv/dt
Diode Forward Voltage
Peak Diode Recovery
––– ––– 1.3 V TJ = 25°C, IS = 43A, VGS = 0V
––– 2.3 ––– V/ns
trr   Reverse Recovery Time
Qrr Reverse Recovery Charge
IRRM Reverse Recovery Current
–––
–––
–––
–––
43
47
63
78
–––
–––
–––
–––
ns
TJ = 25°C
TJ = 125°C
nC
TJ = 25°C
TJ = 125°C
VR = 51V
IF = 43A
di/dt = 100A/µs
––– 2.5 ––– A TJ = 25°C
Notes:
Repetitive rating; pulse width limited by max. junction
temperature.
Limited by TJmax, starting TJ = 25°C, L = 0.34mH
RG = 50, IAS = 43A, VGS =10V. Part not recommended for use
above this value.
Pulse width 400µs; duty cycle 2%.
Rθ is measured at TJ approximately 90°C.
Coss eff. (TR) is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS.
Coss eff. (ER) is a fixed capacitance that gives the same energy as
Coss while VDS is rising from 0 to 80% VDSS.
2 www.irf.com © 2013 International Rectifier
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October 7, 2013
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