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IRFHM8342TRPBF डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Power MOSFET - International Rectifier

भाग संख्या IRFHM8342TRPBF
समारोह Power MOSFET
मैन्युफैक्चरर्स International Rectifier 
लोगो International Rectifier लोगो 
पूर्व दर्शन
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IRFHM8342TRPBF pdf
  IRFHM8342TRPbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
BVDSS
Drain-to-Source Breakdown Voltage
BVDSS/TJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
VGS(th)
IDSS
IGSS
gfs
Qg
Qg
Qgs
Qgd
Qgodr
Qoss
RG
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Output Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Avalanche Characteristics
Parameter
EAS Single Pulse Avalanche Energy
Diode Characteristics
Parameter
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
(Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
Thermal Resistance
RJC (Bottom)
RJC (Top)
RJA
RJA (<10s)
Parameter
Junction-to-Case
Junction-to-Case
Junction-to-Ambient
Junction-to-Ambient
Min.
30
–––
–––
–––
1.35
–––
–––
–––
–––
19
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
 
Typ.
–––
20
13
20
1.8
-5.2
–––
–––
–––
–––
10
5.0
1.8
1.7
1.5
3.3
2.6
8.1
30
7.6
5.6
560
102
48
    
Max. Units
Conditions
–––
–––
16
25
2.35
–––
V VGS = 0V, ID = 250µA
mV/°C Reference to 25°C, ID = 1mA
mVGS = 10V, ID = 17A
VGS = 4.5V, ID = 14A
V VDS = VGS, ID = 25µA
mV/°C
1.0 µA
100 nA
-100
––– S
––– nC
7.5
––– nC
–––
–––  
VDS = 24V, VGS = 0V
VGS = 20V
VGS = -20V
VDS = 10V, ID = 17A
VGS = 10V, VDS = 15V, ID = 17A
VDS = 15V
VGS = 4.5V
ID = 17A
––– nC VDS = 16V, VGS = 0V
–––  
––– VDD = 15V, VGS = 4.5V
––– ns
–––  
–––  
ID = 17A
RG=1.8
–––
––– pF
–––  
VGS = 0V
VDS = 25V
ƒ = 1.0MHz
Typ.
–––
Max.
21
Units
mJ
Min.
–––
–––
–––
–––
–––
 
Typ.
–––
–––
–––
9.4
5.8
  
 
Max. Units
Conditions
20A MOSFET symbol
showing the
D
112 integral reverse
p-n junction diode. G
1.0 V TJ = 25°C, IS = 17A, VGS = 0VS
14 ns TJ = 25°C, IF = 17A, VDD = 15V
8.7 nC di/dt = 330A/µs
 
Typ.
–––
–––
–––
–––
 
Max.
6.2
50
49
34
 
Units
°C/W
2 www.irf.com © 2013 International Rectifier
August 22, 2013
Free Datasheet http://www.Datasheet4U.c

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