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IRFHM8337TRPBF डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Power MOSFET - International Rectifier

भाग संख्या IRFHM8337TRPBF
समारोह Power MOSFET
मैन्युफैक्चरर्स International Rectifier 
लोगो International Rectifier लोगो 
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IRFHM8337TRPBF pdf
  IRFHM8337TRPbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
BVDSS
BVDSS/TJ
RDS(on)
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
  
VGS(th)
VGS(th)
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
IDSS Drain-to-Source Leakage Current  
IGSS
gfs
Qg
Qgs1
Qgs2
Qgd
Qgodr
Qsw
Qoss
RG
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Qgs2 + Qgd)
Output Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
30
–––
–––
–––
1.35
–––
–––
–––
–––
–––
17
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
 
Typ.
–––
0.02
9.4
14.5
1.8
-6.2
–––
–––
–––
–––
–––
5.4
1.1
0.7
2.2
1.5
2.9
3.8
2.0
9.0
11
9.9
5.6
755
171
83
  
 
Max. Units
Conditions
–––
–––
12.4
17.9
2.35
–––
V VGS = 0V, ID = 250µA
V/°C Reference to 25°C, ID = 1mA
m 
VGS = 10V, ID = 12A
VGS = 4.5V, ID =9.4A
V
mV/°C
VDS = VGS, ID = 25µA
1.0
150
100
-100
–––
8.1
µA
VDS = 24V, VGS = 0V
VDS = 24V, VGS = 0V,TJ = 125°C
µA VGS = 20V
VGS =-20 V
S VDS = 15V, ID = 9.4A
–––  
––– nC
–––  
–––  
VDS = 15V
VGS = 4.5V
ID = 9.4A
–––  
––– nC VDS = 16V, VGS = 0V
–––  
––– VDD = 15V, VGS = 4.5V
––– ns ID = 9.4A
–––  
–––  
RG= 1.3
–––
––– pF
–––  
VGS = 0V
VDS = 15V
ƒ = 1.0MHz
Avalanche Characteristics
Parameter
EAS Single Pulse Avalanche Energy
Typ.
–––
 
Max.
13
 
Units
mJ
Diode Characteristics
Parameter
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
(Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
Thermal Resistance
RJC (Bottom)
RJC (Top)
RJA
RJA (<10s)
Parameter
Junction-to-Case
Junction-to-Case
Junction-to-Ambient
Junction-to-Ambient
Min.
–––
–––
–––
–––
–––
 
Typ.
–––
–––
–––
20
27
  
 
Max. Units
Conditions
18
94
MOSFET symbol
A 
showing the
integral reverse
G
D
p-n junction diode.
S
1.0 V TJ = 25°C, IS = 9.4A, VGS = 0V 
30 ns TJ = 25°C, IF = 9.4A, VDD = 15V
41 nC di/dt = 200A/µs
 
Typ.
–––
–––
–––
–––
 
Max.
5.0
50
45
31
 
Units
°C/W
2 www.irf.com © 2013 International Rectifier
August 21, 2013
Free Datasheet http://www.Datasheet4U.com

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