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IRFHM8326PBF डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Power MOSFET - International Rectifier

भाग संख्या IRFHM8326PBF
समारोह Power MOSFET
मैन्युफैक्चरर्स International Rectifier 
लोगो International Rectifier लोगो 
पूर्व दर्शन
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<?=IRFHM8326PBF?> डेटा पत्रक पीडीएफ

IRFHM8326PBF pdf
  IRFHM8326PbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
BVDSS
Drain-to-Source Breakdown Voltage
BVDSS/TJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
VGS(th)
IDSS
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
IGSS Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
gfs Forward Transconductance
Qg Total Gate Charge
Qg Total Gate Charge
Qgs1
Qgs2
Qgd
Qgodr
Qsw
Qoss
RG
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Qgs2 + Qgd)
Output Charge
Gate Resistance
td(on) Turn-On Delay Time
tr Rise Time
td(off) Turn-Off Delay Time
tf Fall Time
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Avalanche Characteristics
Parameter
EAS Single Pulse Avalanche Energy
IAR Avalanche Current
Diode Characteristics
Parameter
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
(Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
Thermal Resistance
RJC (Bottom)
RJC (Top)
RJA
RJA (<10s)
Parameter
Junction-to-Case
Junction-to-Case
Junction-to-Ambient
Junction-to-Ambient
Min.
30
–––
–––
–––
1.2
–––
–––
–––
–––
–––
70
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Min.
–––
–––
–––
–––
–––
 
Typ.
–––
22
3.8
5.2
1.7
-10
–––
–––
–––
–––
–––
39
20
4.8
2.6
6.5
6.1
9.1
11
1.9
12
35
18
12
2496
524
273
 
 
Typ.
–––
–––
–––
15
14
 
Max.
–––
–––
4.7
6.7
2.2
–––
1.0
150
100
-100
–––
–––
30
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
 
Typ.
–––
–––
 
Max.
25
278
1.0
23
21
  
Units
Conditions
V VGS = 0V, ID = 250µA
mV/°C Reference to 25°C, ID = 1mA
mVGS = 10V, ID = 20A
VGS = 4.5V, ID = 20A
V VDS = VGS, ID = 50µA
mV/°C
µA VDS = 24V, VGS = 0V
VDS = 24V, VGS = 0V, TJ = 125°C
nA VGS = 20V
VGS = -20V
S VDS = 10V, ID = 20A
nC VGS = 10V, VDS = 15V, ID = 20A
 
nC
 
 
VDS = 15V
VGS = 4.5V
ID = 20A
 
nC VDS = 16V, VGS = 0V
 
ns
 
 
VDD = 15V, VGS = 4.5V
ID = 20A
RG=1.8
pF
 
VGS = 0V
VDS = 10V
ƒ = 1.0MHz
  
Max.
58
20
  
Units
Conditions
A MOSFET symbol
D
showing the
integral reverse
G
p-n junction diode.
S
V TJ = 25°C, IS = 20A, VGS = 0V
ns TJ = 25°C, IF = 20A, VDD = 15V
nC di/dt = 300A/µs
    
Typ.
–––
Max.
3.4
Units
––– 41 °C/W
––– 44
––– 31
2 www.irf.com © 2013 International Rectifier
March 14, 2013
Free Datasheet http://www.Datasheet4U.com

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डाउनलोड[ IRFHM8326PBF Datasheet.PDF ]


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