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P11N50Z डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - NDP11N50Z - ON Semiconductor

भाग संख्या P11N50Z
समारोह NDP11N50Z
मैन्युफैक्चरर्स ON Semiconductor 
लोगो ON Semiconductor लोगो 
पूर्व दर्शन
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<?=P11N50Z?> डेटा पत्रक पीडीएफ

P11N50Z pdf
NDF11N50Z, NDP11N50Z
THERMAL RESISTANCE
Parameter
JunctiontoCase (Drain)
JunctiontoAmbient Steady State (Note 4)
Symbol
RqJC
RqJA
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Test Conditions
Symbol
OFF CHARACTERISTICS
DraintoSource Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
DraintoSource Leakage Current
VGS = 0 V, ID = 1 mA
Reference to 25°C,
ID = 1 mA
VDS = 500 V, VGS = 0 V
25°C
125°C
BVDSS
DBVDSS/
DTJ
IDSS
GatetoSource Forward Leakage
ON CHARACTERISTICS (Note 5)
Static DraintoSource
OnResistance
VGS = ±20 V
VGS = 10 V, ID = 4.5 A
IGSS
RDS(on)
Gate Threshold Voltage
Forward Transconductance
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VDS = VGS, ID = 100 mA
VDS = 15 V, ID = 4.5 A
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
Total Gate Charge
GatetoSource Charge
GatetoDrain (“Miller”) Charge
VDD = 250 V, ID = 10.5 A,
VGS = 10 V
Plateau Voltage
Gate Resistance
RESISTIVE SWITCHING CHARACTERISTICS
TurnOn Delay Time
Rise Time
TurnOff Delay Time
VDD = 250 V, ID = 10.5 A,
VGS = 10 V, RG = 5 Ω
Fall Time
VGS(th)
gFS
Ciss
Coss
Crss
Qg
Qgs
Qgd
VGP
Rg
td(on)
tr
td(off)
tf
SOURCEDRAIN DIODE CHARACTERISTICS (TC = 25°C unless otherwise noted)
Diode Forward Voltage
IS = 10.5 A, VGS = 0 V
VSD
Reverse Recovery Time
Reverse Recovery Charge
VGS = 0 V, VDD = 30 V
IS = 10.5 A, di/dt = 100 A/ms
trr
Qrr
4. Insertion mounted
5. Pulse Width 380 ms, Duty Cycle 2%.
NDF11N50Z
3.4
50
NDP11N50Z
0.9
50
Min Typ Max
500
0.6
1
50
±10
0.48 0.52
3.0 4.5
7.7
1375
166
40
46
8.7
25
6.2
1.4
15
32
40
23
1.6
310
2.5
Unit
°C/W
Unit
V
V/°C
mA
mA
W
V
S
pF
nC
V
W
ns
V
ns
mC
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डाउनलोड[ P11N50Z Datasheet.PDF ]


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