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P11N50CF डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - FQP11N50CF - Fairchild Semiconductor

भाग संख्या P11N50CF
समारोह FQP11N50CF
मैन्युफैक्चरर्स Fairchild Semiconductor 
लोगो Fairchild Semiconductor लोगो 
पूर्व दर्शन
1 Page
		
<?=P11N50CF?> डेटा पत्रक पीडीएफ

P11N50CF pdf
Package Marking and Ordering Information
Device Marking
FQP11N50CF
FQPF11N50CF
Device
FQP11N50CF
FQPF11N50CF
Package
TO-220
TO-220F
Reel Size
--
--
Tape Width
--
--
Quantity
50
50
Electrical Characteristics TC = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min.
Off Characteristics
BVDSS
BVDSS/
TJ
IDSS
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Zero Gate Voltage Drain Current
IGSSF
Gate-Body Leakage Current, Forward
IGSSR
Gate-Body Leakage Current, Reverse
On Characteristics
VGS = 0 V, ID = 250 µA
ID = 250 µA, Referenced to 25°C
VDS = 500 V, VGS = 0 V
VDS = 400 V, TC = 125°C
VGS = 30 V, VDS = 0 V
VGS = -30 V, VDS = 0 V
500
--
--
--
--
--
VGS(th)
RDS(on)
Gate Threshold Voltage
Static Drain-Source
On-Resistance
VDS = VGS, ID = 250 µA
VGS = 10 V, ID = 5.5 A
2.0
--
gFS Forward Transconductance
Dynamic Characteristics
VDS = 40 V, ID = 5.5 A
(Note 4)
--
Ciss Input Capacitance
Coss
Output Capacitance
Crss Reverse Transfer Capacitance
Switching Characteristics
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
--
--
--
td(on)
tr
Turn-On Delay Time
Turn-On Rise Time
VDD = 250 V, ID = 11 A,
RG = 25
td(off)
Turn-Off Delay Time
tf Turn-Off Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
VDS = 400 V, ID = 11A,
VGS = 10 V
Qgd Gate-Drain Charge
Drain-Source Diode Characteristics and Maximum Ratings
(Note 4, 5)
(Note 4, 5)
--
--
--
--
--
--
--
IS Maximum Continuous Drain-Source Diode Forward Current
--
ISM Maximum Pulsed Drain-Source Diode Forward Current
--
VSD Drain-Source Diode Forward Voltage
VGS = 0 V, IS = 11 A
--
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VGS = 0 V, IS = 11 A,
dIF / dt = 100 A/µs
(Note 4)
--
--
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 10mH, IAS = 11A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
3. ISD 11A, di/dt 200A/µs, VDD BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width 300µs, Duty cycle 2%
5. Essentially independent of operating temperature
Typ.
--
0.5
--
--
--
--
--
0.48
15
1515
185
25
24
70
120
75
43
8
19
--
--
--
90
1.5
Max. Units
-- V
-- V/°C
10
100
100
-100
µA
µA
nA
nA
4.0 V
0.55
-- S
2055
235
30
pF
pF
pF
57 ns
150 ns
250 ns
160 ns
55 nC
-- nC
-- nC
11 A
44 A
1.4 V
-- ns
-- µC
FQP11N50CF/FQPF11N50CF Rev. A
2
www.fairchildsemi.com
Free Datasheet http://www.Datasheet4U.com

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