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IRGS15B60KPBF डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - INSULATED GATE BIPOLAR TRANSISTOR - International Rectifier

भाग संख्या IRGS15B60KPBF
समारोह INSULATED GATE BIPOLAR TRANSISTOR
मैन्युफैक्चरर्स International Rectifier 
लोगो International Rectifier लोगो 
पूर्व दर्शन
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<?=IRGS15B60KPBF?> डेटा पत्रक पीडीएफ

IRGS15B60KPBF pdf
IRGS15B60KPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units Conditions
V(BR)CES
Collector-to-Emitter Breakdown Voltage
600 — — V VGE = 0V, IC = 500µA
V(BR)CES/TJ Temperature Coeff. of Breakdown Voltage
— 0.3 — V/°C VGE = 0V, IC = 1.0mA (25°C-150°C)
1.5 1.8 2.2
IC = 15A, VGE = 15V, TJ = 25°C
VCE(on)
Collector-to-Emitter Saturation Voltage
— 2.05 2.5
V IC = 15A, VGE = 15V, TJ = 125°C
— 2.1 2.6
IC = 15A, VGE = 15V, TJ = 150°C
VGE(th)
Gate Threshold Voltage
3.5 4.5 5.5
V VCE = VGE, IC = 250µA
VGE(th)/TJ Threshold Voltage temp. coefficient
— -10 — mV/°C VCE = VGE, IC =1.0mA (25°C - 150°C)
gfe Forward Transconductance
— 10.6 —
S VCE = 50V, IC = 20A, PW = 80µs
ICES Collector-to-Emitter Leakage Current
5.0
500
150
1000
µA
VGE = 0V, VCE = 600V, TJ = 25°C
VGE = 0V, VCE = 600V, TJ = 150°C
IGES Gate-to-Emitter Leakage Current
— — ±100 nA VGE = ± 20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
Qg Total Gate Charge (turn-on)
— 56 84
IC = 15A
Qge Gate-to-Emitter Charge (turn-on)
— 7.0 10 nC VGE = 15V
Qgc Gate-to-Collector Charge (turn-on)
— 26 39
VCC = 400V
Eon Turn-On Switching Loss
— 220 330
IC = 15A, VCC = 400V, VGE = 15V
Eoff
Etotal
Turn-Off Switching Loss
Total Switching Loss
— 340 455
— 560 785
J RG = 22, L = 200µH
dLS = 150nH TJ = 25°C
td(on)
Turn-On delay time
— 34 44
IC = 15A, VCC = 400V, VGE = 15V
tr Rise time
— 16 22 ns RG = 22, L = 200µH
td(off)
Turn-Off delay time
— 184 200
LS = 150nH TJ = 25°C
tf Fall time
— 20 26
Eon Turn-On Switching Loss
— 355 470
IC = 15A, VCC = 400V, VGE = 15V
Eoff
Etotal
Turn-Off Switching Loss
Total Switching Loss
— 490 600
J RG = 22, L = 200µH
— 835 1070
dLS = 150nH TJ = 150°C
td(on)
Turn-On delay time
— 34 44
IC = 15A, VCC = 400V, VGE = 15V
tr Rise time
— 18 25 ns RG = 22, L = 200µH
td(off)
Turn-Off delay time
— 203 226
LS = 150nH TJ = 150°C
tf Fall time
— 28 36
Cies Input Capacitance
— 850 —
VGE = 0V
Coes Output Capacitance
— 75 — pF VCC = 30V
Cres Reverse Transfer Capacitance
— 35 —
f = 1.0Mhz
IC = 62A
RBSOA
Reverse Bias Safe Operating Area
FULL SQUARE
VCC = 500V, Vp =600V
Rg = 22, VGE = +20V to 0V, TJ =150°C
SCSOA
Short Circuit Safe Operating Area
10
µs
VCC = 360V, Vp =600V ,TJ = 150°C
Rg = 22, VGE = +15V to 0V
Ref.Fig
5,6,7
8,9,10
8,9
10,11
Ref.Fig
CT1
CT4
CT4
CT4
12,14
WF1, WF2
13, 15
CT4
W F1
W F2
4
CT2
CT3
WF3
Note  to ƒ are on page 11
2
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