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IRGR2B60KDPBF डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - INSULATED GATE BIPOLAR TRANSISTOR - International Rectifier

भाग संख्या IRGR2B60KDPBF
समारोह INSULATED GATE BIPOLAR TRANSISTOR
मैन्युफैक्चरर्स International Rectifier 
लोगो International Rectifier लोगो 
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IRGR2B60KDPBF pdf
  IRGR2B60KDPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)CES
Collector-to-Emitter Breakdown Voltage
V(BR)CES/TJ Temperature Coeff. of Breakdown Voltage
VCE(on)
Collector-to-Emitter Saturation Voltage
VGE(th)
gfe
ICES
 
VFM
Gate Threshold Voltage
Forward Transconductance
Collector-to-Emitter Leakage Current
 
Diode Forward Voltage Drop
IGES Gate-to-Emitter Leakage Current
600
4.0
0.49
1.95
2.28
1.2
0.5
23
1.3
1.1
—V
— V/°C
2.25 V
 
6.0 V
—S
25 µA
1.6 V
±100 nA
VGE = 0V, IC = 500µA
VGE = 0V, IC = 1mA (25°C-150°C)
IC = 2.0A, VGE = 15V, TJ = 25°C
IC = 2.0A, VGE = 15V, TJ = 150°C
VCE = VGE, IC = 250µA
VCE = 50V, IC = 2.0A, PW = 20µs
VGE = 0V, VCE = 600V
VGE = 0V, VCE = 600V, TJ = 150°C
IF = 2.0A
IF = 2.0A, TJ = 150°C
VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
Qg
Qge
Qgc
Eon
Eoff
Etot
td(on)
tr
td(off)
tf
Eon
Eoff
Etot
td(on)
tr
td(off)
tf
Cies
Coes
Cres
RBSOA
Total Gate Charge (turn-on)
Gate-to-Emitter Charge (turn-on)
Gate-to-Collector Charge (turn-on)
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
Turn-Off delay time
Fall time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
Turn-Off delay time
Fall time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Reverse Bias Safe Operating Area
— 8.0 12
IC = 2.0A
— 1.3 2.0 nC  VGE = 15V
— 4.0 6.0  
VCC = 400V
— 74 160
— 39 120 µJ IC = 2.0A, VCC = 400V, VGE = 15V
— 113 280   RG = 100, L = 7.1mH, TJ = 25°C
— 11 30   Energy losses include tail & diode 
— 8.7 25 ns  reverse recovery
— 150 170
 
— 56 75  
— 120 —
— 68 — µJ IC = 2.0A, VCC =400V, VGE=15V
— 188 —
— 13 —
  RG = 100, L = 7.1mH, TJ = 150°C
  Energy losses include tail & diode 
— 6.8 — ns  reverse recovery
— 170 —
 
— 110 —  
— 110 —
VGE = 0V
— 17 — pF VCC = 30V
— 4.0 —
f = 1.0Mhz
FULL SQUARE
TJ = 150°C, IC = 8.0A
VCC = 480V, Vp 600V
SCSOA
Erec
trr
Irr
Short Circuit Safe Operating Area
Reverse Recovery Energy of the Diode
Diode Reverse Recovery Time
Diode Peak Reverse Recovery Current
Rg = 100, VGE = +20V to 0V
10 — — µs TJ = 150°C, Vp 600V, Rg=330
VCC = 360V, VGE = +15V to 0V
— 19 30 µJ TJ = 150°C
— 45 68 ns VCC = 400V, IF = 2.0A, L = 7.1mH
— 5.8 8.7 A VGE = 15V, Rg = 100
Notes:
VCC = 80% (VCES), VGE = 20V, L = 200µH, RG = 100.
Pulse width limited by max. junction temperature.
Refer to AN-1086 for guidelines for measuring V(BR)CES safely.
Ris measured at TJ of approximately 90°C.
FBSOA operating conditions only.
When mounted on 1” square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer
to application note #AN-994.
2 www.irf.com © 2012 International Rectifier
January 8, 2013
Free Datasheet http://www.Datasheet4U.com

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IRGR2B60KDPBFINSULATED GATE BIPOLAR TRANSISTORInternational Rectifier
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