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IRGR3B60KD2 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - INSULATED GATE BIPOLAR TRANSISTOR - International Rectifier

भाग संख्या IRGR3B60KD2
समारोह INSULATED GATE BIPOLAR TRANSISTOR
मैन्युफैक्चरर्स International Rectifier 
लोगो International Rectifier लोगो 
पूर्व दर्शन
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IRGR3B60KD2 pdf
IRGR3B60KD2
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units Conditions
V(BR)CES
Collector-to-Emitter Breakdown Voltage 600 — — V VGE = 0V, IC = 500µA
V(BR)CES/TJ Temperature Coeff. of Breakdown Voltage — 0.32 — V/°C VGE = 0V, IC = 1mA (25°C-150°C)
VCE(on)
Collector-to-Emitter Voltage
— 1.9 2.4
IC = 3.0A, VGE = 15V
— 2.2 2.6 V IC = 3.0A, VGE = 15V, TJ = 150°C
VGE(th)
Gate Threshold Voltage
3.5 4.5 5.5
VCE = VGE, IC = 250µA
VGE(th)/TJ Threshold Voltage temp. coefficient
— -8.5 — mV/°C VCE = VGE, IC = 1mA (25°C-150°C)
gfe Forward Transconductance
— 1.9 — S VCE = 50V, IC = 3.0A, PW = 80µs
ICES
Zero Gate Voltage Collector Current
— 1.0 150 µA VGE = 0V, VCE = 600V
— 200 500
VGE = 0V, VCE = 600V, TJ = 150°C
VFM Diode Forward Voltage Drop
— 1.5 1.8 V IF = 3.0A, VGE = 0V
— 1.5 1.8
IF = 3.0A, VGE = 0V, TJ = 150°C
IGES Gate-to-Emitter Leakage Current
— — ±100 nA VGE = ±20V, VCE = 0V
Ref.Fig.
5,6,7
9,10,11
9,10,11
12
8
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
Ref.Fig.
Qg Total Gate Charge (turn-on)
— 13 20
IC = 3.0A
23
Qge Gate-to-Emitter Charge (turn-on)
— 1.5 2.3 nC VCC = 400V
CT1
Qgc
Gate-to-Collector Charge (turn-on)
— 6.6 9.9
VGE = 15V
Eon Turn-On Switching Loss
— 62 75
IC = 3.0A, VCC = 400V
CT4
Eoff Turn-Off Switching Loss
Etot Total Switching Loss
e— 39 50 µJ VGE = 15V, RG = 100, L = 2.5mH
— 100 120
TJ = 25°C
td(on)
Turn-On delay time
— 18 22
IC = 3.0A, VCC = 400V
tr Rise time
— 15 21 ns VGE = 15V, RG = 100, L = 2.5mH
CT4
td(off)
Turn-Off delay time
— 110 120
TJ = 25°C
tf Fall time
— 68 80
Eon Turn-On Switching Loss
— 91 100
IC = 3.0A, VCC = 400V
CT4
Eoff Turn-Off Switching Loss
Etot Total Switching Loss
— 98 140 µJ VGE = 15V, RG = 100, L = 2.5mH
— 190 230
eTJ = 150°C
13,15
WF1,WF2
td(on)
Turn-On delay time
— 18 22
IC = 3.0A, VCC = 400V
14,16
tr Rise time
— 17 22 ns VGE = 15V, RG = 100, L = 2.5mH
CT4
td(off)
Turn-Off delay time
— 120 140
TJ = 150°C
WF1
tf Fall time
— 91 105
WF2
Cies Input Capacitance
— 190 —
VGE = 0V
Coes Output Capacitance
— 23 — pF VCC = 30V
22
Cres Reverse Transfer Capacitance
— 6.6 —
f = 1.0MHz
RBSOA
Reverse Bias Safe Operating Area
FULL SQUARE
TJ = 150°C, IC = 15.6A, Vp = 600V
4
VCC=500V,VGE=+15V to 0V,RG = 100CT2
SCSOA
Short Circuit Safe Operating Area
10 — — µs TJ = 150°C, Vp = 600V, RG = 100
CT3
VCC=360V,VGE = +15V to 0V
WF4
Erec
Reverse Recovery Energy of the Diode — 38 44 µJ TJ = 150°C
17,18,19
trr Diode Reverse Recovery Time
— 77 84 ns VCC = 400V, IF = 3.0A, L = 2.5mH
20,21
Irr
Diode Peak Reverse Recovery Current
— 4.8 5.3 A VGE = 15V, RG = 100
CT4,WF3
 VCC = 80% (VCES), VGE = 15V, L = 100µH, RG = 100Ω.
ƒ Energy losses include "tail" and diode reverse recovery.
‚ When mounted on 1" square PCB (FR-4 or G-10 Material ) . For recommended
footprint and soldering techniques refer to application note #AN-994.
2
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