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IRGR4045DPBF डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - INSULATED GATE BIPOLAR TRANSISTOR - International Rectifier

भाग संख्या IRGR4045DPBF
समारोह INSULATED GATE BIPOLAR TRANSISTOR
मैन्युफैक्चरर्स International Rectifier 
लोगो International Rectifier लोगो 
पूर्व दर्शन
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IRGR4045DPBF pdf
IRGR4045DPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
V(B R)CE S
V(BR)CE S/T J
Parameter
Collector-to-Emitter BreakdownVoltage
T emperatureCoeff. of B reakdownVoltage
Min.
600
Typ.
0.36
Max. Units Conditions
f— V VGE = 0V, Ic =100 μA
f— V/°C VGE = 0V, Ic = 250μA ( 25 -175 oC )
VCE (on )
Collector-to-Emitter Saturation Voltage
— 1.7 2.0
— 2.07 —
IC = 6.0A, VGE = 15V, TJ = 25°C
V IC = 6.0A, VGE = 15V, TJ = 150°C
VGE (th)
Gate Threshold Voltage
— 2.14
3.5 —
6.5
IC = 6.0A, VGE = 15V, TJ = 175°C
V VCE = VGE, IC = 150μA
VGE (th)/T J Threshold Voltage temp. coefficient
— -13
— mV/°C VCE = VGE, IC = 250μA ( 25 -175 oC )
gfe Forward Transconductance
— 5.8 —
S VCE = 25V, IC = 6.0A, PW =80s
ICES
Collector-to-Emitter Leakage Current
— — 25 μA VGE = 0V,VCE = 600V
— — 250
VGE = 0V, VCE = 600V, TJ =175°C
VFM Diode Forward Voltage Drop
IGES Gate-to-Emitter Leakage Current
— 1.60 2.30 V IF = 6.0A
— 1.30 —
IF = 6.0A, TJ = 175°C
— — ±100 nA VGE = ± 20 V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
hMin. Typ. Max. Units
Conditions
Qg
Qge
Qgc
Eon
Eoff
Etotal
td(on)
tr
td(off)
tf
Eon
Eoff
Etotal
td(on)
tr
td(off)
tf
Ci es
Coes
Cres
RBSOA
Total Gate Charge (turn-on)
Gate-to-Emitter Charge (turn-on)
Gate-to-Collector Charge (turn-on)
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
Turn-Off delay time
Fall time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
Turn-Off delay time
Fall time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Reverse Bias Safe Operating Area
SCSOA
Erec
trr
Irr
Short Circuit Safe Operating Area
Reverse recovery energy of the diode
Diode Reverse recovery time
Peak Reverse Recovery Current
— 13 19.5
— 3.1 4.65
— 6.4 9.6
— 56 86
— 122 143
— 178 229
— 27 35
— 11 15
— 75 93
— 17 22
— 140 —
— 189 —
— 329 —
— 26 —
— 12 —
— 95 —
— 32 —
— 350 —
— 29 —
— 10 —
FULL SQUARE
—5
— 178
— 74
— 12
IC = 6.0A
nC VCC = 400V
VGE = 15V
IC = 6.0A, VCC = 400V, VGE = 15V
μJ RG = 47, L=1mH, LS= 150nH, TJ = 25°C
E nergy los s es include tail anddiode revers e recovery
IC = 6.0A, VCC = 400V
ns RG = 47, L=1mH, LS= 150nH
TJ = 25°C
IC = 6.0A, VCC = 400V, VGE = 15V
μJ RG = 47, L=1mH, LS= 150nH, TJ = 175°C
E nergy los s es include tail anddiode revers e recovery
IC = 6.0A, VCC = 400V
ns RG = 47, L=1mH, LS= 150nH
TJ = 175°C
VGE = 0V
pF VCC = 30V
f = 1Mhz
TJ = 175°C, IC = 24A
VCC = 500V, Vp =600V
RG = 100, VGE = +20V to 0V
μs VCC = 400V, Vp =600V
RG = 100, VGE = +15V to 0V
μJ TJ = 175oC
ns VCC = 400V, IF = 6.0A
A VGE = 15V, Rg = 47, L=1mH, LS=150nH
R ef . F i g
CT 6
5,6,7,9,
10 ,11
9 ,10 ,11,12
8
R ef . F i g
24
CT 1
CT 4
CT 4
13,15
CT 4
WF 1,WF 2
14 ,16
CT 4
WF 1,WF 2
23
4
CT 2
22
CT 3, WF 4
17,18,19
2 0 ,2 1
WF3
Notes:
 VCC = 80% (VCES), VGE = 15V, L = 1.0mH, RG = 47
‚ Pulse width limited by max. junction temperature.
ƒ Ris measured at TJ approximately 90°C.
„ Refer to AN-1086 for guidelines for measuring V(BR)CES safely.
… When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note #AN-994.
† Maximum limits are based on statistical sample size characterization.
2 www.irf.comFree Datasheet http://www.Datasheet4U.com

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