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IRGS4610DPBF डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - INSULATED GATE BIPOLAR TRANSISTOR - International Rectifier

भाग संख्या IRGS4610DPBF
समारोह INSULATED GATE BIPOLAR TRANSISTOR
मैन्युफैक्चरर्स International Rectifier 
लोगो International Rectifier लोगो 
पूर्व दर्शन
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IRGS4610DPBF pdf
IRGR/S/B4610DPbF
Thermal Resistance
Param e te r
dRθJC Thermal Resistance, Junction-to-Case -(IGBT)
dRθJC Thermal Resistance, Junction-to-Case -(Diode)
RθCS
Thermal Resistance, Case-to-Sink (flat, greased surface) (TO-220)
hThermal Resistance, Junction-to-Ambient (PCB mount) (D-PAK)
Thermal Resistance, Junction-to-Ambient (D-PAK)
RθJA Thermal Resistance, Junction-to-Ambient (PCB mount, Steady State)
h(D2PAK)
Thermal Resistance, Junction-to-Ambient ( Socket mount) (TO-220)
Min.
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
–––
0.5
–––
–––
–––
–––
Max.
1.9
6.3
–––
50
110
40
62
Units
°C/W
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Param e te r
Min. Typ. Max.
V(BR)CES
Collector-to-Emitter Breakdown Voltage
ΔV(BR)CES/ΔTJ Temperature Coeff. of Breakdown Voltage
600
0.36
1.7
2.0
VCE(on)
Collector-to-Emitter Saturation Voltage
— 2.07 —
— 2.14 —
VGE(th)
Gate Threshold Voltage
4.0 — 6.5
ΔVGE(th)/ΔTJ Threshold Voltage temp. coefficient
gfe Forward Transconductance
— -13 —
— 5.8 —
ICES
Collector-to-Emitter Leakage Current
— — 25
— — 250
VFM Diode Forward Voltage Drop
— 1.60 2.30
— 1.30 —
IGES Gate-to-Emitter Leakage Current
— — ±100
Units
Conditions
eV VGE = 0V, Ic =100 μA
eV/°C VGE = 0V, Ic = 250μA ( 25 -175 oC )
IC = 6.0A, VGE = 15V, TJ = 25°C
V IC = 6.0A, VGE = 15V, TJ = 150°C
IC = 6.0A, VGE = 15V, TJ = 175°C
V VCE = VGE, IC = 150μA
mV/°C VCE = VGE, IC = 250μA ( 25 -175 oC )
S VCE = 25V, IC = 6.0A, PW =80μS
μA VGE = 0V,VCE = 600V
VGE = 0V, VCE = 600V, TJ =175°C
V IF = 6.0A
IF = 6.0A, TJ = 175°C
nA VGE = ± 20 V
Notes:
 VCC = 80% (VCES), VGE = 20V, L = 1.0mH, RG = 100Ω.
‚ Rθ is measured at TJ approximately 90°C.
ƒ Refer to AN-1086 for guidelines for measuring V(BR)CES safely.
„ Pulse width limited by max. junction temperature.
… Values influenced by parasitic L and C in measurement
† When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application
note #AN-994: http://www.irf.com/technical-info/appnotes/an-994.pdf
2 www.irf.com © 2013 International Rectifier Submit Datasheet Feedback
October 25, 2013Free Datasheet http://www.Datasheet4U.com

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IRGS4610DPBFINSULATED GATE BIPOLAR TRANSISTORInternational Rectifier
International Rectifier


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