DataSheet.in

IRG7PH35U-EP डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - INSULATED GATE BIPOLAR TRANSISTOR - International Rectifier

भाग संख्या IRG7PH35U-EP
समारोह INSULATED GATE BIPOLAR TRANSISTOR
मैन्युफैक्चरर्स International Rectifier 
लोगो International Rectifier लोगो 
पूर्व दर्शन
1 Page
		
<?=IRG7PH35U-EP?> डेटा पत्रक पीडीएफ

IRG7PH35U-EP pdf
IRG7PH35UPbF/IRG7PH35U-EP
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max.
V(BR)CES
ΔV(BR)CES/ΔTJ
VCE(on)
Collector-to-Emitter Breakdown Voltage
Temperature Coeff. of Breakdown Voltage
Collector-to-Emitter Saturation Voltage
1200
1.2
1.9
2.3
2.2
— 2.4 —
VGE(th)
ΔVGE(th)/ΔTJ
gfe
Gate Threshold Voltage
Threshold Voltage temp. coefficient
Forward Transconductance
3.0 — 6.0
— -16 —
— 22 —
ICES Collector-to-Emitter Leakage Current — 2.0 100
— 2000 —
IGES Gate-to-Emitter Leakage Current
— — ±100
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max.
Qg
Qge
Qgc
Eon
Eoff
Etotal
td(on)
tr
td(off)
tf
Eon
Eoff
Etotal
td(on)
tr
td(off)
tf
Cies
Coes
Cres
Total Gate Charge (turn-on)
Gate-to-Emitter Charge (turn-on)
Gate-to-Collector Charge (turn-on)
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
Turn-Off delay time
Fall time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
Turn-Off delay time
Fall time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
— 85 130
— 15 20
— 35 50
— 1060 1300
— 620 850
— 1680 2150
— 30 50
— 15 30
— 160 180
— 80 105
— 1880 —
— 1140 —
— 3020 —
— 25 —
— 20 —
— 200 —
— 200 —
— 1940 —
— 60 —
— 40 —
RBSOA
Reverse Bias Safe Operating Area
FULL SQUARE
Units
Conditions
eV VGE = 0V, IC = 250μA
V/°C VGE = 0V, IC = 1mA (25°C-150°C)
V IC = 20A, VGE = 15V, TJ = 25°C
IC = 20A, VGE = 15V, TJ = 150°C
IC = 20A, VGE = 15V, TJ = 175°C
V VCE = VGE, IC = 600μA
mV/°C VCE = VGE, IC = 600μA (25°C - 150°C)
S VCE = 50V, IC = 20A, PW = 30μs
μA VGE = 0V, VCE = 1200V
VGE = 0V, VCE = 1200V, TJ = 175°C
nA VGE = ±30V
Units
Conditions
IC = 20A
nC VGE = 15V
VCC = 600V
IC = 20A, VCC = 600V, VGE = 15V
μJ RG = 10Ω, L = 200uH, LS = 150nH, TJ = 25°C
Energy losses include tail & diode reverse recovery
Diode clamp the same as IRG7PH35UDPbF
ns
IC = 20A, VCC = 600V, VGE=15V
μJ RG=10Ω, L=200uH, LS=150nH, TJ = 175°C
Energy losses include tail & diode reverse recovery
Diode clamp the same as IRG7PH35UDPbF
ns
pF VGE = 0V
VCC = 30V
f = 1.0Mhz
TJ = 175°C, IC = 80A
VCC = 960V, Vp =1200V
Rg = 10Ω, VGE = +20V to 0V
Notes:
 VCC = 80% (VCES), VGE = 20V, RG = 10Ω.
‚ Pulse width limited by max. junction temperature.
ƒ Refer to AN-1086 for guidelines for measuring V(BR)CES safely.
„ Rθ is measured at TJ of approximately 90°C.
2
www.irf.comFree Datasheet http://www.Datasheet4U.com

विन्यास 10 पेज
डाउनलोड[ IRG7PH35U-EP Datasheet.PDF ]


शेयर लिंक


अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
IRG7PH35U-EPINSULATED GATE BIPOLAR TRANSISTORInternational Rectifier
International Rectifier
IRG7PH35U-EPINSULATED GATE BIPOLAR TRANSISTORInternational Rectifier
International Rectifier


भाग संख्याविवरणविनिर्माण
30L120CTSchottky RectifierPFC Device
PFC Device
AT28C010-12DKSpace 1-MBit (128K x 8) Paged Parallel EEPROMATMEL
ATMEL
B20NM50FDN-CHANNEL POWER MOSFETSTMicroelectronics
STMicroelectronics
D8442SD844SavantIC
SavantIC
FAE391-A20AM/FM Automotive Electronic TunerMitsumi
Mitsumi


Index : 0  1  2  3  4  5  6  7  8  9  A  B  C  D  E  F  G  H  I  J  K  L  M  N  O  P  Q  R  S  T  U  V  W  X  Y  Z



www.DataSheet.in    |   2017   |  संपर्क   |   खोज     |   English