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IRG7PH28UD1PBF डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - INSULATED GATE BIPOLAR TRANSISTOR - International Rectifier

भाग संख्या IRG7PH28UD1PBF
समारोह INSULATED GATE BIPOLAR TRANSISTOR
मैन्युफैक्चरर्स International Rectifier 
लोगो International Rectifier लोगो 
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IRG7PH28UD1PBF pdf
  IRG7PH28UD1PbF/IRG7PH28UD1MPbF
Thermal Resistance
Parameter
RθJC (IGBT) Junction-to-Case (IGBT)
RθJC (Diode) Junction-to-Case (Diode)
RθCS
Case-to-Sink (flat, greased surface)
RθJA Junction-to-Ambient (typical socket mount)
Min.
–––
–––
–––
–––
 
Typ.
–––
–––
0.24
–––
 
Max.
1.09
1.35
–––
40
 
Units
°C/W
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)CES
Collector-to-Emitter Breakdown Voltage
V(BR)CES/TJ Temperature Coeff. of Breakdown Voltage
VCE(on)
Collector-to-Emitter Saturation Voltage
VGE(th)
gfe
ICES
 
VFM
Gate Threshold Voltage
Forward Transconductance
Collector-to-Emitter Leakage Current
 
Diode Forward Voltage Drop
IGES Gate-to-Emitter Leakage Current
1200
3.0
1.4
1.95
2.4
13
1.0
100
1.1
1.0
—V
— V/°C
2.30 V
 
6.0 V
—S
100 µA
1.2 V
±100 nA
VGE = 0V, IC = 100µA
VGE = 0V, IC = 1mA (25°C-150°C)
IC = 15A, VGE = 15V, TJ = 25°C
IC = 15A, VGE = 15V, TJ = 150°C
VCE = VGE, IC = 350µA
VCE = 50V, IC = 15A, PW = 20µs
VGE = 0V, VCE = 1200V
VGE = 0V, VCE = 1200V, TJ = 150°C
IF = 15A
IF = 15A, TJ = 150°C
VGE = ±30V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
Qg Total Gate Charge (turn-on)
Qge Gate-to-Emitter Charge (turn-on)
Qgc Gate-to-Collector Charge (turn-on)
Eoff Turn-Off Switching Loss
— 60 90
IC = 15A
— 10 15 nC  VGE = 15V
— 27 40  
VCC = 600V
543 766
µJ IC = 15A, VCC = 600V, VGE = 15V
td(off)
Turn-Off delay time
tf Fall time
Eoff Turn-Off Switching Loss
RG = 22, L = 1.0mH, TJ = 25°C
— 229 — ns  Energy losses include tail & diode 
— 62 —  
reverse recovery
— 939 — µJ IC = 15A, VCC = 600V, VGE=15V
td(off)
tf
Cies
Coes
Cres
RBSOA
Turn-Off delay time
Fall time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Reverse Bias Safe Operating Area
— 272 —
— 167 —
— 1160 —
— 55 —
— 30 —
FULL SQUARE
ns
 
pF
RG = 22, L = 1.0mH, TJ = 150°C
Energy losses include tail & diode 
reverse recovery
VGE = 0V
VCC = 30V
f = 1.0Mhz
TJ = 150°C, IC = 60A
VCC = 960V, Vp 1200V
Rg = 22, VGE = +20V to 0V
Notes:
VCC = 80% (VCES), VGE = 20V, L = 25µH, RG = 22.
Pulse width limited by max. junction temperature.
Refer to AN-1086 for guidelines for measuring V(BR)CES safely.
Ris measured at TJ of approximately 90°C.
FBSOA operating conditions only.
VGE = 0V, TJ = 75°C, PW 10µs.
2 www.irf.com © 2012 International Rectifier
January 8, 2013
Free Datasheet http://www.Datasheet4U.com

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IRG7PH28UD1PBFINSULATED GATE BIPOLAR TRANSISTORInternational Rectifier
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