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IRG4PC20UPBF डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - UltraFast Speed IGBT - International Rectifier

भाग संख्या IRG4PC20UPBF
समारोह UltraFast Speed IGBT
मैन्युफैक्चरर्स International Rectifier 
लोगो International Rectifier लोगो 
पूर्व दर्शन
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<?=IRG4PC20UPBF?> डेटा पत्रक पीडीएफ

IRG4PC20UPBF pdf
IRG4PC20UPbF
PROVISIONAL
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)CES
V(BR)ECS
Collector-to-Emitter Breakdown Voltage 600 ––– –––
fEmitter-to-Collector Breakdown Voltage
18 ––– –––
V VGE = 0V, ICE = 250µA
V VGE = 0V, ICE = 1.0A
V(BR)CES/TJ Breakdown Voltage Temp. Coefficient
––– 0.69 ––– V/°C VGE = 0V, ICE = 1.0mA
––– 1.85 2.1
VGE = 15V, ICE = 6.5A
VCE(on)
Collector-to-Emitter Saturation Voltage
2.27 –––
V VGE = 15V, ICE = 13A
––– 1.87 –––
VGE = 15V, ICE = 6.5A, TJ = 150°C
VGE(th)
Gate Threshold Voltage
3.0 ––– 6.0
V VCE = VGE, ICE = 250µA
VGE(th)/TJ
gfe
ICES
Gate Threshold Voltage Coefficient
gForward Transconductance
Collector-to-Emitter Leakage Current
IGES Gate-to-Emitter Forward Leakage
Gate-to-Emitter Reverse Leakage
––– -11 ––– mV/°C
1.4 4.3 ––– S VCE = 100V, ICE = 6.5A
––– ––– 250 µA VCE = 600V, VGE = 0V
––– ––– 2.0
VCE = 10V, VGE = 0V, TJ = 25°C
––– ––– 1000
VCE = 600V, VGE = 0V, TJ = 150°C
––– ––– 100 nA VGE = 20V
––– ––– -100
VGE = -20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Qg Total Gate Charge (turn-on)
––– 27 41
VCE = 400V
Qge Gate-to-Emitter Charge (turn-on)
Qgc Gate-to-Collector Charge
––– 4.5 6.8 nC IC = 6.5A
––– 10 16
eVGE = 15V
td(on)
Turn-On delay time
––– 21 –––
tr Rise time
––– 13 ––– ns IC = 6.5A, VCC = 480V
td(off)
Turn-Off delay time
––– 86 130
VGE = 15V, RG = 50
tf Fall time
––– 120 180
TJ = 25°C
E(on)
Turn-On Switching Loss
––– 0.10 –––
Energy losses include "tail"
E(off)
Turn-Off Switching Loss
––– 0.12 ––– mJ
Ets Total Switching Loss
––– 0.22 0.4
td(on)
Turn-On delay time
––– 20 –––
IC = 6.5A, VCC = 480V
tr Rise time
––– 14 ––– ns VGE = 15V, RG = 50
td(off)
Turn-Off delay time
––– 190 –––
TJ = 150°C
tf Fall time
––– 140 –––
Energy losses include "tail"
Ets Total Switching Loss
––– 0.42 ––– mJ
LE Internal Emitter Inductance
––– 7.5 ––– nH Measured 5mm from package
Cies Input Capacitance
––– 530 –––
VGE = 0V
Coes Output Capacitance
––– 39 ––– pF VCE = 30V
Cres Reverse Transfer Capacitance
––– 7.4 –––
ƒ = 1.0MHz
Notes:
 Repetitive rating; VGE = 20V, pulse width limited by
max. junction temperature.
‚ VCC = 80%(VCES), VGE = 20V, L = 10µH, RG = 50.
ƒ Repetitive rating; pulse width limited by maximum
junction temperature.
2
„ Pulse width 80µs; duty factor 0.1%.
… Pulse width 5.0µs, single shot.
www.irf.com
Free Datasheet http://www.datasheet4u.com/

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