DataSheet.in

AOD413A डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - 40V P-Channel MOSFET - Alpha & Omega Semiconductors

भाग संख्या AOD413A
समारोह 40V P-Channel MOSFET
मैन्युफैक्चरर्स Alpha & Omega Semiconductors 
लोगो Alpha & Omega Semiconductors लोगो 
पूर्व दर्शन
1 Page
		
<?=AOD413A?> डेटा पत्रक पीडीएफ

AOD413A pdf
AOD413A
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min Typ Max Units
STATIC PARAMETERS
BVDSS
IDSS
IGSS
VGS(th)
ID(ON)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
RDS(ON) Static Drain-Source On-Resistance
ID= -250µA, VGS=0V
-40
V
VDS= -40V, VGS=0V
TJ=55°C
-1
µA
-5
VDS=0V, VGS= ±20V
±100 nA
VDS=VGS ID= -250µA
-1.7 -2 -3 V
VGS= -10V, VDS= -5V
-30
A
VGS= -10V, ID= -12A
36 44
TJ=125°C
52 65 m
VGS= -4.5V, ID= -8A
52 66
gFS Forward Transconductance
VSD Diode Forward Voltage
VDS= -5V, ID= -12A
IS= -1A,VGS=0V
22
-0.76
-1
S
V
IS Maximum Body-Diode Continuous Current
-12 A
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
VGS=0V, VDS= -20V, f=1MHz
900 1125
97
pF
pF
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=0V, f=1MHz
68 pF
14
SWITCHING PARAMETERS
Qg (-10V) Total Gate Charge
16.2 21 nC
Qg (-4.5V) Total Gate Charge
Qgs Gate Source Charge
VGS= -10V, VDS= -20V,
ID= -12A
7.2 9.4 nC
3.8 nC
Qgd Gate Drain Charge
3.5 nC
tD(on)
tr
tD(off)
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
VGS= -10V, VDS= -20V, RL=1.6,
RGEN=3
6.2
8.4
44.8
ns
ns
ns
tf Turn-Off Fall Time
trr Body Diode Reverse Recovery Time IF= -12A, dI/dt=100A/µs
Qrr Body Diode Reverse Recovery Charge IF= -12A, dI/dt=100A/µs
41.2
21.2
13.8
ns
ns
nC
A: The value of RθJA is measured with the device in a still air environment with T A =25°C. The power dissipation P DSM and current rating IDSM
are based on TJ(MAX)=150°C, using t 10s junction-to-ambient thermal resistance.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C.
D.
E.
The
The
RθJA is the sum of the thermal impedence
static characteristics in Figures 1 to 6 are
from junction to case RθJC and case
obtained using <300 µs pulses, duty
to ambient.
cycle 0.5%
ma-x2.0
F. These curves are based on the junction-to-case thermal impedence which is measured with the device m2o0unted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse ratin g.
G. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
H. The maximum current rating is limited by bond-wires.
*This device is guaranteed green after data code 8X11 (Sep 1ST 2008).
Rev4: April 2011
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
Free Datasheet http://www.datasheet4u.com/

विन्यास 6 पेज
डाउनलोड[ AOD413A Datasheet.PDF ]


शेयर लिंक


अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
AOD413P-Channel Enhancement Mode Field Effect TransistorAlpha & Omega Semiconductors
Alpha & Omega Semiconductors
AOD413P-Channel 40-V (D-S) MOSFETFreescale
Freescale


भाग संख्याविवरणविनिर्माण
30L120CTSchottky RectifierPFC Device
PFC Device
AT28C010-12DKSpace 1-MBit (128K x 8) Paged Parallel EEPROMATMEL
ATMEL
B20NM50FDN-CHANNEL POWER MOSFETSTMicroelectronics
STMicroelectronics
D8442SD844SavantIC
SavantIC
FAE391-A20AM/FM Automotive Electronic TunerMitsumi
Mitsumi


Index : 0  1  2  3  4  5  6  7  8  9  A  B  C  D  E  F  G  H  I  J  K  L  M  N  O  P  Q  R  S  T  U  V  W  X  Y  Z



www.DataSheet.in    |   2017   |  संपर्क   |   खोज     |   English