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AOD413A डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - 40V P-Channel MOSFET - Freescale

भाग संख्या AOD413A
समारोह 40V P-Channel MOSFET
मैन्युफैक्चरर्स Freescale 
लोगो Freescale लोगो 
पूर्व दर्शन
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<?=AOD413A?> डेटा पत्रक पीडीएफ

AOD413A pdf
AOD413A
40V P-Channel MOSFET
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min Typ Max Units
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
ID= -250µA, VGS=0V
VDS= -40V, VGS=0V
IGSS
VGS(th)
ID(ON)
RDS(ON)
gFS
VSD
IS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
VDS=0V, VGS= ±20V
VDS=VGS ID= -250µA
VGS= -10V, VDS= -5V
VGS= -10V, ID= -12A
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
VGS= -4.5V, ID= -8A
VDS= -5V, ID= -12A
IS= -1A,VGS=0V
Maximum Body-Diode Continuous Current
TJ=55°C
TJ=125°C
-40
-1.7
-30
-1
-5
±100
-2 -3
36
52
52
22
-0.76
44
65
66
-1
-12
V
µA
nA
V
A
m
S
V
A
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS= -20V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
900 1125
97
68
14
pF
pF
pF
SWITCHING PARAMETERS
Qg (-10V) Total Gate Charge
Qg (-4.5V) Total Gate Charge
Qgs Gate Source Charge
VGS= -10V, VDS= -20V,
ID= -12A
Qgd Gate Drain Charge
tD(on)
Turn-On DelayTime
tr Turn-On Rise Time
VGS= -10V, VDS= -20V, RL=1.6,
tD(off)
Turn-Off DelayTime
RGEN=3
tf Turn-Off Fall Time
trr Body Diode Reverse Recovery Time IF= -12A, dI/dt=100A/µs
Qrr Body Diode Reverse Recovery Charge IF= -12A, dI/dt=100A/µs
16.2 21
7.2 9.4
3.8
3.5
6.2
8.4
44.8
41.2
21.2
13.8
nC
nC
nC
nC
ns
ns
ns
ns
ns
nC
A: The value of RθJA is measured with the device in a still air environment with T A =25°C. The power dissipation P DSM and current rating IDSM
are based on TJ(MAX)=150°C, using t 10s junction-to-ambient thermal resistance.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C.
D.
E.
The
The
RθJA is the sum of the thermal impedence
static characteristics in Figures 1 to 6 are
from junction to case RθJC and case
obtained using <300 µs pulses, duty
to ambient.
cycle 0.5%
ma-x2.0
F. These curves are based on the junction-to-case thermal impedence which is measured with the device m2o0unted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse ratin g.
G. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
H. The maximum current rating is limited by bond-wires.
*This device is guaranteed green after data code 8X11 (Sep 1ST 2008).
Rev4: April 2011
2/6
www.freescale.net.cn
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