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AOD4128 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-Channel Enhancement Mode Field Effect Transistor - Freescale

भाग संख्या AOD4128
समारोह N-Channel Enhancement Mode Field Effect Transistor
मैन्युफैक्चरर्स Freescale 
लोगो Freescale लोगो 
पूर्व दर्शन
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<?=AOD4128?> डेटा पत्रक पीडीएफ

AOD4128 pdf
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min Typ Max Units
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
ID=250uA, VGS=0V
25
V
IDSS Zero Gate Voltage Drain Current
VDS=25V, VGS=0V
TJ=55°C
1
uA
5
IGSS Gate-Body leakage current
VDS=0V, VGS=±20V
100 nA
VGS(th) Gate Threshold Voltage
VDS=VGS, ID=250µA
1.3 1.6 2.5
V
ID(ON)
On state drain current
VGS=10V, VDS=5V
165
A
RDS(ON) Static Drain-Source On-Resistance
VGS=10V, ID=20A
TJ=125°C
3.4 4
m
5.0 6
VGS=4.5V, ID=20A
5.8 7 m
gFS Forward Transconductance
VDS=5V, ID=20A
55 S
VSD Diode Forward Voltage
IS=1A, VGS=0V
IS Maximum Body-Diode Continuous CurrentG
0.7 1
60
V
A
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=12.5V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
3578
731
438
2.5
4300
950
615
4
pF
pF
pF
SWITCHING PARAMETERS
Qg(10V)
Qg(4.5V)
Qgs
Qgd
tD(on)
tr
tD(off)
tf
trr
Qrr
Total Gate Charge
Total Gate Charge
Gate Source Charge
VGS=10V, VDS=12.5V, ID=20A
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
VGS=10V, VDS=12.5V,
RL=0.63, RGEN=3
Turn-Off Fall Time
Body Diode Reverse Recovery Time IF=20A, dI/dt=100A/µs
Body Diode Reverse Recovery Charge IF=20A, dI/dt=100A/µs
61.8 80
29.8 39
8.5
12.9
11.6
17.7
45
20
39 48
32
nC
nC
nC
nC
ns
ns
ns
ns
ns
nC
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The
Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends
on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allow s it.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C.
D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=175°C.
G. The maximum current rating is limited by bond-wires.
H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA
curve provides a single pulse rating.
*This device is guaranteed green after data code 8X11 (Sep 1ST 2008).
Re1: Sep. 2008
2/6
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