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AOD4120 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-Channel Enhancement Mode Field Effect Transistor - Freescale

भाग संख्या AOD4120
समारोह N-Channel Enhancement Mode Field Effect Transistor
मैन्युफैक्चरर्स Freescale 
लोगो Freescale लोगो 
पूर्व दर्शन
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<?=AOD4120?> डेटा पत्रक पीडीएफ

AOD4120 pdf
AOD4120
N-Channel Enhancement Mode Field
Effect Transistor
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min Typ Max Units
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
ID=250uA, VGS=0V
20
V
IDSS Zero Gate Voltage Drain Current
VDS=16V, VGS=0V
TJ=55°C
1 uA
5
IGSS Gate-Body leakage current
VDS=0V, VGS=±16V
100 nA
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250μA
0.6 1.26
2
V
ID(ON)
On state drain current
VGS=10V, VDS=5V
75
A
VGS=10V, ID=20A
14 18
RDS(ON) Static Drain-Source On-Resistance
VGS=4.5V, ID=10A
TJ=125°C
21
20 25 mΩ
VGS=2.5V, ID=2A
57 75
gFS Forward Transconductance
VDS=5V, ID=20A
19 S
VSD Diode Forward Voltage
IS=1A, VGS=0V
IS Maximum Body-Diode Continuous Current G
0.77
1
30
V
A
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=10V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
900
162
105
0.9 1.35
pF
pF
pF
Ω
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
Qg(4.5V) Total Gate Charge
Qgs Gate Source Charge
Qgd Gate Drain Charge
tD(on)
Turn-On DelayTime
tr Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf Turn-Off Fall Time
VGS=10V, VDS=10V, ID=20A
VGS=10V, VDS=10V, RL=0.5Ω,
RGEN=3Ω
15
7.2
1.8
2.8
4.5
9.2
18.7
3.3
18
9
nC
nC
nC
nC
ns
ns
ns
ns
trr Body Diode Reverse Recovery Time IF=20A, dI/dt=100A/μs
Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=100A/μs
18 ns
9.5 nC
A: The value of R θJA is measured
T A =25°C. The Power dissipation
with the device mounted on 1in 2 FR-4 board with
PDSM is based on R θJA and the maximum allowed
2oz. Copper, in a still air environment with
junction temperature0of 150°C. The value in
any
given
application depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature T J(MAX)=175°C.
D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 μs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of T J(MAX)=175°C.
G. The maximum current rating is limited by bond-wires.
H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA
curve provides a single pulse rating.
*This device is guaranteed green after data code 8X11 (Sep 1 ST 2008).
Rev4: Nov 2008
2/6
www.freescale.net.cn
Free Datasheet http://www.datasheet4u.com/

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