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AOT290L डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - 100V N-Channel MOSFET - Alpha & Omega Semiconductors

भाग संख्या AOT290L
समारोह 100V N-Channel MOSFET
मैन्युफैक्चरर्स Alpha & Omega Semiconductors 
लोगो Alpha & Omega Semiconductors लोगो 
पूर्व दर्शन
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<?=AOT290L?> डेटा पत्रक पीडीएफ

AOT290L pdf
AOT290L/AOB290L
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min Typ Max Units
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
ID=250µA, VGS=0V
100
V
IDSS Zero Gate Voltage Drain Current
VDS=100V, VGS=0V
TJ=55°C
1
µA
5
IGSS Gate-Body leakage current
VDS=0V, VGS= ±20V
100 nA
VGS(th) Gate Threshold Voltage
VDS=VGS ID=250µA
2.9 3.5 4.1 V
ID(ON)
On state drain current
VGS=10V, VDS=5V
500
A
VGS=10V, ID=20A
2.7 3.5
RDS(ON) Static Drain-Source On-Resistance
TO220
VGS=10V, ID=20A
TJ=125°C
4.4 5.7
m
TO263
2.5 3.2
gFS Forward Transconductance
VDS=5V, ID=20A
50 S
VSD Diode Forward Voltage
IS=1A,VGS=0V
IS Maximum Body-Diode Continuous CurrentG
0.67
1
140
V
A
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=50V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
7180
2780
42
1.7
9550
3700
72
pF
pF
pF
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
90 126 nC
Qgs Gate Source Charge
VGS=10V, VDS=50V, ID=20A
33 nC
Qgd Gate Drain Charge
21 nC
tD(on)
Turn-On DelayTime
31 69 ns
tr Turn-On Rise Time
VGS=10V, VDS=50V, RL=2.5,
24 53 ns
tD(off)
Turn-Off DelayTime
RGEN=3
45 99 ns
tf Turn-Off Fall Time
27 60 ns
trr Body Diode Reverse Recovery Time IF=20A, dI/dt=500A/µs
65 91 ns
Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs
460 644 nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application
depends on the user's specific board design, and the maximum temperature of 175°C may be used if the P CB allows it.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep
initial TJ =25°C.
D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink,
assuming a maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse ratin g.
G. The maximum current limited by package is 120A.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev3 : Sep 2011
www.aosmd.com
Page 2 of 6
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