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AOT270L डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - 75V N-Channel MOSFET - Freescale

भाग संख्या AOT270L
समारोह 75V N-Channel MOSFET
मैन्युफैक्चरर्स Freescale 
लोगो Freescale लोगो 
पूर्व दर्शन
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<?=AOT270L?> डेटा पत्रक पीडीएफ

AOT270L pdf
AOT270L/AOB270L
75V N-Channel MOSFET
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min Typ Max Units
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
IGSS
VGS(th)
ID(ON)
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
RDS(ON) Static Drain-Source On-Resistance
ID=250µA, VGS=0V
VDS=75V, VGS=0V
VDS=0V, VGS=±20V
VDS=VGS ID=250µA
VGS=10V, VDS=5V
VGS=10V, ID=20A
TO220
VGS=6V, ID=20A
TO220
VGS=10V, ID=20A
TO263
VGS=6V, ID=20A
TO263
75
TJ=55°C
2
560
TJ=125°C
TJ=125°C
2.5
2.1
3.3
2.4
1.9
3.1
2.2
1
5
±100
3
2.6
4.2
V
µA
nA
V
A
3
m
2.3
3.9
2.8
gFS Forward Transconductance
VDS=5V, ID=20A
VSD Diode Forward Voltage
IS=1A,VGS=0V
IS Maximum Body-Diode Continuous Current G
80
0.66
1
140
S
V
A
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=37.5V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
10350
1560
90
0.4 0.9
1.4
pF
pF
pF
SWITCHING PARAMETERS
Qg Total Gate Charge
153 215 nC
Qgs Gate Source Charge
VGS=10V, VDS=37.5V, ID=20A 33 nC
Qgd Gate Drain Charge
35 nC
tD(on)
Turn-On DelayTime
30 ns
tr Turn-On Rise Time
VGS=10V, VDS=37.5V, RL=1.9,
24
ns
tD(off)
Turn-Off DelayTime
RGEN=3
80 ns
tf Turn-Off Fall Time
32 ns
trr Body Diode Reverse Recovery Time IF=20A, dI/dt=500A/µs
45 ns
Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs
330 nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application
depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep
initial TJ =25°C.
D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink,
assuming a maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse rating.
G. The maximum current limited by package is 140A.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
2/6
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