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AOT240L डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - 40V N-Channel MOSFET - Freescale

भाग संख्या AOT240L
समारोह 40V N-Channel MOSFET
मैन्युफैक्चरर्स Freescale 
लोगो Freescale लोगो 
पूर्व दर्शन
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<?=AOT240L?> डेटा पत्रक पीडीएफ

AOT240L pdf
AOT240L/AOB240L/AOTF240L
40V N-Channel MOSFET
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min Typ Max Units
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
IGSS
VGS(th)
ID(ON)
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
RDS(ON) Static Drain-Source On-Resistance
ID=250µA, VGS=0V
VDS=40V, VGS=0V
VDS=0V, VGS=±20V
VDS=VGSID=250µA
VGS=10V, VDS=5V
VGS=10V, ID=20A
TO220/TO220F
VGS=4.5V, ID=20A
TO220/TO220F
VGS=10V, ID=20A
TO263
VGS=4.5V, ID=20A
TO263
TJ=55°C
TJ=125°C
40
1
400
1.7
2.4
3.7
3
2.1
2.7
1
5
±100
2.2
2.9
4.7
V
µA
nA
V
A
m
3.7 m
2.6 m
3.5 m
gFS Forward Transconductance
VDS=5V, ID=20A
VSD Diode Forward Voltage
IS=1A,VGS=0V
IS Maximum Body-Diode Continuous Current G
78
0.65
1
105
S
V
A
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=20V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
3510
1070
68
0.5 1
1.5
pF
pF
pF
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
49 72 nC
Qg(4.5V) Total Gate Charge
Qgs Gate Source Charge
VGS=10V, VDS=20V, ID=20A
22 32 nC
9 nC
Qgd Gate Drain Charge
7 nC
tD(on)
Turn-On DelayTime
11 ns
tr Turn-On Rise Time
VGS=10V, VDS=20V, RL=1,
10 ns
tD(off)
Turn-Off DelayTime
RGEN=3
38 ns
tf Turn-Off Fall Time
11 ns
trr Body Diode Reverse Recovery Time IF=20A, dI/dt=500A/µs
21 ns
Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs
58 nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application
depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep
initial TJ =25°C.
D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink,
assuming a maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse rating.
G. The maximum current limited by package.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
2/7
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